Spectrally efficient photodiode for backside illuminated sensor
First Claim
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1. A backside illuminated sensor, comprising:
- a semiconductor substrate having a front surface and a back surface;
a plurality of pixels formed on the front surface of the semiconductor substrate, wherein the plurality of pixels includes a first, second, and third pixel disposed at the front surface of the semiconductor substrate;
a dielectric layer disposed above the front surface of the semiconductor substrate;
a plurality of array regions arranged according to the plurality of pixels, wherein the plurality of array regions includes a first, second, and third array; and
a plurality of color filters formed over the back surface, each being aligned with one of the plurality of pixels, andwherein the first array extends a first depth in a direction of the back surface, the second array extends a second depth in the direction of the back surface, the third array extends a third depth in the direction of the back surface,wherein the second depth extends deeper in the direction of the back surface of the substrate than first depth and the third depth extends deeper in the direction of the back surface than the second depth.
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Abstract
A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.
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Citations
20 Claims
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1. A backside illuminated sensor, comprising:
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a semiconductor substrate having a front surface and a back surface; a plurality of pixels formed on the front surface of the semiconductor substrate, wherein the plurality of pixels includes a first, second, and third pixel disposed at the front surface of the semiconductor substrate; a dielectric layer disposed above the front surface of the semiconductor substrate; a plurality of array regions arranged according to the plurality of pixels, wherein the plurality of array regions includes a first, second, and third array; and a plurality of color filters formed over the back surface, each being aligned with one of the plurality of pixels, and wherein the first array extends a first depth in a direction of the back surface, the second array extends a second depth in the direction of the back surface, the third array extends a third depth in the direction of the back surface, wherein the second depth extends deeper in the direction of the back surface of the substrate than first depth and the third depth extends deeper in the direction of the back surface than the second depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A backside illuminated sensor, comprising:
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a first, second, and third pixel having a first, second, and third doping region, respectively; a semiconductor substrate having a front side and a back side, the first, second, and third pixels formed at the front side of the semiconductor substrate; a first, second, and third color filter formed over the back side of the semiconductor substrate, the first, second, and third color filter aligned with the first, second, and third pixel, respectively; wherein the first doping region is spaced a first distance from the first color filter, the second doping region is spaced a second distance from the second color filter, the third doping region is spaced a third distance from the third color filter, wherein the first doping region extends a first depth in a direction of the back side, the second doping region extends a second depth in the direction of the back side, the third doping region extends a third depth in the direction of the back side, and wherein the second depth extends deeper in the direction of the back side of the substrate than first depth and the third depth extends deeper in the direction of the back side than the second depth. - View Dependent Claims (14, 15, 16, 17)
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18. A backside illuminated sensor, comprising:
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a semiconductor substrate having a front surface and a back surface; a first, second, and third pixel disposed at the front surface of the semiconductor substrate, the first, second, and third pixel having a first, second, and third doping region, respectively; a red color filter disposed over the back surface of the semiconductor substrate, the red color filter aligned with the first pixel; a green color filter disposed over the back surface of the semiconductor substrate, the green color filter aligned with the second pixel; and a blue color filter disposed over the back surface of the semiconductor substrate, the blue color filter aligned with the third pixel; wherein the first doping region extends a first depth in a direction of the back surface, the second doping extends a second depth in the direction of the back surface, the third doping region extends a third depth in the direction of the back surface, wherein the second depth extends deeper in the direction of the back surface of the substrate than first depth and the third depth extends deeper in the direction of the back surface than the second depth. - View Dependent Claims (19, 20)
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Specification