Method of fabricating display device

• US 8,709,847 B2
• Filed: 01/31/2013
• Issued: 04/29/2014
• Est. Priority Date: 04/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hayakawa, Masahiko, Murakami, Satoshi, Yamazaki, Shunpei, Akimoto, Kengo
• Primary Examiner(s): Jahan, Bilkis
• Application Number:
  US13/755,614
• Publication Number:
  US 20130157398A1
• Time in Patent Office: 453 Days
• Field of Search: 257/59, 257/72, 438/48
• US Class Current: 438/48
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

Claims

1. A method of fabricating a display device comprising the steps of

forming a pixel electrode over a substrate, a part of the pixel electrode covered by a base film;

forming a semiconductor film over the base film;

forming a gate insulating film over the semiconductor film;

forming a gate electrode over the gate insulating film;

forming an impurity region in the semiconductor film;

forming a first insulating nitride film over the gate electrode;

forming an organic resin film over the first insulating nitride film;

forming a first opening portion in the organic resin film over the impurity region;

forming a second insulating nitride film to cover the first opening portion;

etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion to form a second opening portion;

forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion,

wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;

wherein in forming the second opening portion, the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film are etched so that the pixel electrode is exposed and the pixel electrode and the wiring are electrically connected to each other after the pixel electrode is exposed.

3. The display device according to claim 1, wherein the organic resin film is a photosensitive organic resin film.

5. The method of fabricating a display device according to claim 1, wherein the first insulating nitride film and the second insulating nitride film each comprises a silicon nitride film, a silicon nitrooxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitrooxide film or an aluminum oxynitride film.

7. The method of fabricating a display device according to claim 1, wherein a radius of curvature at an upper end portion of the first opening portion falls in a range of 3 through 30 μ

m.

9. The method of fabricating a display device according to claim 1, wherein a radius of curvature at an upper end portion of the first opening portion is changed continuously in a range of 3 through 30 μ

m.

11. The method of fabricating a display device according to claim 1, wherein a contact angle θ

at a lower end portion of the first opening portion is set to 30°

<

θ

<

65°

.

2. A method of fabricating a display device comprising the steps of:

forming a pixel electrode over a substrate, a part of the pixel electrode covered by a base film;

forming a semiconductor film over the base film;

forming a gate insulating film over the semiconductor film;

forming a gate electrode over the gate insulating film;

forming an impurity region in the semiconductor film;

forming a first insulating nitride film over the gate electrode;

forming an acrylic film over the first insulating nitride film;

forming a first opening portion in the acrylic film over the impurity region;

forming a second insulating nitride film to cover the first opening portion;

etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion to form a second opening portion,

forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion,

wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode,

wherein in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film are etched so that the pixel electrode is exposed and the pixel electrode and the wiring are electrically connected to each other after the pixel electrode is exposed.

4. The display device according to claim 2, wherein the acrylic film is a positive type photosensitive acrylic film.

6. The method of fabricating a display device according to claim 2, wherein the first insulating nitride film and the second insulating nitride film each comprises a silicon nitride film, a silicon nitrooxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitrooxide film or an aluminum oxynitride film.

8. The method of fabricating a display device according to claim 2, wherein a radius of curvature at an upper end portion of the first opening portion falls in a range of 3 through 30 μ

m.

10. The method of fabricating a display device according to claim 2, wherein a radius of curvature at an upper end portion of the first opening portion is changed continuously in a range of 3 through 30 μ

m.

12. The method of fabricating a display device according to claim 2, wherein a contact angle θ

at a lower end portion of the first opening portion is set to 30°

<

θ

<

65°

.

13. A method of fabricating a display device comprising the steps of

forming a pixel electrode over a substrate;

forming a base film over a part of the pixel electrode;

forming a semiconductor film over a part of the base film;

forming a gate insulating film over the semiconductor film;

forming a gate electrode over the gate insulating film;

forming an impurity region in the semiconductor film;

forming a first insulating nitride film over the gate electrode;

forming an organic resin film over the first insulating nitride film;

forming a first opening portion in the organic resin film over the impurity region;

forming a second insulating nitride film to cover the first opening portion;

etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion to form a second opening portion;

forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion;

wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;

wherein in forming the second opening portion, the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film are etched so that the pixel electrode is exposed and the pixel electrode and the wiring are electrically connected to each other after the pixel electrode is exposed.

14. The method of fabricating a display device according to claim 13, wherein the organic resin film is an acrylic film.

15. The method of fabricating a display device according to claim 13, wherein the first insulating nitride film and the second insulating nitride film each comprises a silicon nitride film, a silicon nitrooxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitrooxide film or an aluminum oxynitride film.

16. The method of fabricating a display device according to claim 13, wherein a radius of curvature at an upper end portion of the first opening portion falls in a range of 3 through 30 μ

m.

17. The method of fabricating a display device according to claim 13, wherein a radius of curvature at an upper end portion of the first opening portion is changed continuously in a range of 3 through 30 μ

m.

18. The method of fabricating a display device according to claim 13, wherein a contact angle θ

at a lower end portion of the first opening portion is set to 30°

<

θ

<

65°

.