FinFET body contact and method of making same
First Claim
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1. A semiconductor device comprising:
- a substrate;
a fin raised above the substrate;
the fin comprising;
a first source/drain region in the fin;
a first body contact in the fin;
a first portion of the fin, the first portion extending from the first source/drain region to the first body contact, wherein the first portion is a semiconductor material; and
a second source/drain region in the fin, the second source/drain region laterally spaced from the first source drain region in a direction opposite of the first body contact;
a second body contact in the fin; and
a second portion of the fin, the second portion extending from the second body contact to a nearest adjacent source/drain region, wherein the second portion is a semiconductor material.
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Abstract
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
360 Citations
19 Claims
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1. A semiconductor device comprising:
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a substrate; a fin raised above the substrate;
the fin comprising;a first source/drain region in the fin; a first body contact in the fin; a first portion of the fin, the first portion extending from the first source/drain region to the first body contact, wherein the first portion is a semiconductor material; and a second source/drain region in the fin, the second source/drain region laterally spaced from the first source drain region in a direction opposite of the first body contact; a second body contact in the fin; and a second portion of the fin, the second portion extending from the second body contact to a nearest adjacent source/drain region, wherein the second portion is a semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a substrate; a first semiconductor fin extending from the substrate, wherein the first semiconductor fin comprises; a first source/drain region in the first semiconductor fin; a second source/drain region in the first semiconductor fin; a first gate structure on a top surface and sidewalls of the first semiconductor fin, wherein the first gate structure is laterally between the first source/drain region and the second source/drain region; a first body contact in the first semiconductor fin; and a second gate structure on a top surface and sidewalls of the first semiconductor fin, wherein the second gate structure is laterally between the first source/drain region and the first body contact, and wherein the second gate structure is aligned with the first body contact. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A fin field-effect transistor (FinFET) device comprising:
a semiconductor fin extending from a substrate, the semiconductor fin comprising; a first source/drain region in the semiconductor fin; a second source/drain region in the semiconductor fin; a channel region interposed between the first and second source/drain regions; a first body contact in the semiconductor fin; a first active gate over the channel region; a first dummy gate laterally between the first source/drain region and the first body contact; a second body contact in the semiconductor fin; a second portion of the semiconductor fin, the second portion extending from the second body contact to the second source/drain region, the second portion comprising a semiconductor material; and a second dummy gate over the second portion of the semiconductor fin. - View Dependent Claims (18, 19)
Specification