Semiconductor process
First Claim
1. A semiconductor process, comprising:
- forming a gate structure on a substrate;
forming a main spacer on the substrate beside the gate structure;
forming a source/drain in the substrate beside the main spacer;
removing the main spacer;
forming an epitaxial spacer on the substrate beside the gate structure after the main spacer is removed;
forming a recess in the substrate beside the epitaxial spacer; and
performing an epitaxial process to form an epitaxial structure in the recess after the source/drain is formed.
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Accused Products
Abstract
A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.
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Citations
19 Claims
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1. A semiconductor process, comprising:
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forming a gate structure on a substrate; forming a main spacer on the substrate beside the gate structure; forming a source/drain in the substrate beside the main spacer; removing the main spacer; forming an epitaxial spacer on the substrate beside the gate structure after the main spacer is removed; forming a recess in the substrate beside the epitaxial spacer; and performing an epitaxial process to form an epitaxial structure in the recess after the source/drain is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor process, comprising:
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forming a gate structure in a first area and a second area of a substrate respectively; forming a main spacer on the substrate beside the two gate structures, respectively; forming a source/drain in the substrate beside the two main spacers, respectively; removing the two main spacers; forming an epitaxial spacer on the substrate beside the two gate structures, respectively; and self-aligning and forming two epitaxial structures in the substrate by the two epitaxial spacers beside the two gate structures, respectively, after the two source/drains are formed. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification