In-Ga-Zn-type oxide, oxide sintered body, and sputtering target
First Claim
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1. An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ
- ) of 7.0°
to 8.4°
, 30.6°
to 32.0°
, 33.8°
to 35.8°
, 53.5°
to 56.5° and
56.5°
to 59.5°
in an X-ray diffraction measurement (CuKα
rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ
) of 30.6°
to 32.0° and
33.8°
to 35.8°
is a main peak and the other is a sub peak.
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Abstract
An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
-
Citations
11 Claims
-
1. An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ
- ) of 7.0°
to 8.4°
, 30.6°
to 32.0°
, 33.8°
to 35.8°
, 53.5°
to 56.5° and
56.5°
to 59.5°
in an X-ray diffraction measurement (CuKα
rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ
) of 30.6°
to 32.0° and
33.8°
to 35.8°
is a main peak and the other is a sub peak. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- ) of 7.0°
Specification