Semiconductor device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an insulating film containing nitrogen over a substrate including an insulating surface;
introducing the substrate over which the insulating film containing nitrogen is formed, into a vacuum chamber;
forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.;
forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.; and
performing heat treatment at a temperature higher than or equal to 150°
C. and lower than or equal to 650°
C. after the deposition is performed under the second deposition condition,wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure.
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Accused Products
Abstract
An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor.
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Citations
16 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an insulating film containing nitrogen over a substrate including an insulating surface; introducing the substrate over which the insulating film containing nitrogen is formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.;forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.; andperforming heat treatment at a temperature higher than or equal to 150°
C. and lower than or equal to 650°
C. after the deposition is performed under the second deposition condition,wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate including an insulating surface; forming an insulating film containing nitrogen over the gate electrode layer; introducing the substrate over which the gate electrode layer and the insulating film containing nitrogen are formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.;forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.; andperforming heat treatment at a temperature higher than or equal to 150°
C. and lower than or equal to 650°
C. after the deposition is performed under the second deposition condition,wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification