Light emitting device and manufacturing method for same

• US 8,791,481 B2
• Filed: 04/01/2009
• Issued: 07/29/2014
• Est. Priority Date: 04/01/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O
• Primary Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US12/936,071
• Publication Number:
  US 20110168971A1
• Time in Patent Office: 1,945 Days
• Field of Search: 257/98, 257/99
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.

Claims

1. A light emitting device comprising:

a support substrate;

a reflective layer on the support substrate;

a complex layer including a current blocking region and ohmic contact regions on the reflective layer;

a light emitting semiconductor layer disposed on the complex layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;

a passivation layer disposed on the complex layer, the light emitting semiconductor layer divided into a plurality of regions by a portion of the passivation layer; and

a first electrode disposed on the light emitting semiconductor layer and the portion of the passivation layer.

2. The light emitting device of claim 1, further comprising a diffusion barrier layer between the reflective layer and the support substrate.

3. The light emitting device of claim 2, further comprising a wafer bonding layer between the diffusion barrier layer and the support substrate.

4. The light emitting device of claim 1, wherein the passivation layer is at both of a lateral surface and a portion of a top surface of the light emitting semiconductor layer.

5. The light emitting device of claim 1, wherein the current blocking region includes one of an electric insulating material, an empty space filled with air, or a material forming a schottky contact interface with respect to the second conductive semiconductor layer.

6. The light emitting device of claim 1, further comprising a light extracting structure on the light emitting structure.

7. The light emitting device of claim 6, wherein the light extracting structure contacts the light emitting structure.

8. The light emitting device of claim 6, wherein a top surface of the first electrode is higher than a top surface of the light extracting structure.

9. The light emitting device of claim 1, wherein a lowermost surface of the first electrode is lower than a top surface of the active layer.