Light emitting device and manufacturing method for same
First Claim
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1. A light emitting device comprising:
- a support substrate;
a reflective layer on the support substrate;
a complex layer including a current blocking region and ohmic contact regions on the reflective layer;
a light emitting semiconductor layer disposed on the complex layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;
a passivation layer disposed on the complex layer, the light emitting semiconductor layer divided into a plurality of regions by a portion of the passivation layer; and
a first electrode disposed on the light emitting semiconductor layer and the portion of the passivation layer.
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Abstract
Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
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Citations
9 Claims
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1. A light emitting device comprising:
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a support substrate; a reflective layer on the support substrate; a complex layer including a current blocking region and ohmic contact regions on the reflective layer; a light emitting semiconductor layer disposed on the complex layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; a passivation layer disposed on the complex layer, the light emitting semiconductor layer divided into a plurality of regions by a portion of the passivation layer; and a first electrode disposed on the light emitting semiconductor layer and the portion of the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification