Copper pillar bump with non-metal sidewall protection structure and method of making the same
First Claim
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1. An integrated circuit device, comprising:
- a conductive pillar formed over a substrate, the conductive pillar having a sidewall surface and a top surface;
an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar, the UBM layer having a surface region; and
a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer,wherein the protection structure is formed of a non-metal material, and exposes sidewalls of the UBM layer.
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Abstract
This description relates to an integrated circuit device including a conductive pillar formed over a substrate. The conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar. The UBM layer has a surface region. The integrated circuit device further includes a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer. The protection structure is formed of a non-metal material.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a conductive pillar formed over a substrate, the conductive pillar having a sidewall surface and a top surface; an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar, the UBM layer having a surface region; and a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer, wherein the protection structure is formed of a non-metal material, and exposes sidewalls of the UBM layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated circuit device, comprising:
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a conductive pillar on a substrate, the conductive pillar having a sidewall surface and a top surface; a first under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar; a second UBM layer between the first UBM layer and the conductive pillar, the second UBM layer having a surface region adjacent to and extending from the sidewall surface of the conductive pillar; a protection structure on the sidewall surface of the conductive pillar and the surface region, wherein the protection structure exposes sidewalls of the first UBM layer and the second UBM layer; a plurality of cap layers on the top surface of the conductive pillar; and a solder layer formed on the plurality of cap layers, wherein the protection structure extends to cover at least a portion of a sidewall surface of the plurality of cap layers and a sidewall surface of the solder layer. - View Dependent Claims (9, 10, 11, 12)
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13. An integrated circuit device, comprising:
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a conductive pillar on a substrate, the conductive pillar having a sidewall surface and a top surface; an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar, the UBM layer having a surface region adjacent to and extending perpendicular to the sidewall surface of the conductive pillar; and a protection structure on the sidewall surface of the conductive pillar and in direct contact with the surface region, wherein the protection structure comprises; a protection layer extending over the sidewall surface and the surface region; and a barrier layer between the protection layer and surface region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification