Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation

• US 8,828,783 B2
• Filed: 10/15/2013
• Issued: 09/09/2014
• Est. Priority Date: 07/17/2008
• Status: Active Grant

• Current Assignee: Uriel Solar, Inc.
• Original Assignee: Uriel Solar, Inc.
• Inventors: Garnett, James David
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US14/054,732
• Publication Number:
  US 20140124020A1
• Time in Patent Office: 329 Days
• US Class Current: 438/84
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/02966 including ternary compounds, e.g. HgCdTe
• CPC Class Codes: H01L 31/0392 including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/03925 including AIIBVI compound materials, e.g. CdTe, CdS
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/073 comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
• CPC Class Codes: H01L 31/078 including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01L 31/1832 comprising ternary compounds, e.g. Hg Cd Te
• CPC Class Codes: H01L 31/1836 comprising a growth substrate not being an AIIBVI compound
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Claims

1. A photovoltaic device, comprising:

a glass substrate or superstrate;

a first layer adjacent to said glass superstrate or substrate, said first layer comprising tellurium (Te) and cadmium (Cd), wherein said first layer is doped n-type;

a second layer adjacent to said first layer, said second layer comprising Cd and Te, wherein said second layer is doped p-type; and

a third layer adjacent to said second layer, said third layer comprising Cd and Te, wherein said third layer is doped n-type or p-type.

2. The photovoltaic device of claim 1, further comprising a fourth layer comprising Zn between said glass substrate or superstrate and said first layer.

3. The photovoltaic device of claim 1, further comprising a fourth layer adjacent to said third layer, said fourth layer comprising Te.

4. The photovoltaic device of claim 3, further comprising a metal contact adjacent to said fourth layer.

5. The photovoltaic device of claim 3, wherein said fourth layer further comprises Cd.

6. The photovoltaic device of claim 3, wherein said third layer is doped n-type and said fourth layer is doped p-type.

7. The photovoltaic device of claim 1, wherein one or more of said first layer, second layer and third layer further comprise zinc.

8. The photovoltaic device of claim 1, further comprising a p-n or n-p tunnel junction between said second layer and said third layer.

9. The photovoltaic device of claim 1, further comprising a fourth layer comprising Sb adjacent to said third layer.

10. The photovoltaic device of claim 1, wherein one or more of said first layer, second layer and third layer are compositionally graded in Cd.

11. The photovoltaic device of claim 1, further comprising a metal contact adjacent to said third layer.

12. A photovoltaic device, comprising:

a glass substrate or superstrate;

a first layer adjacent to said glass superstrate or substrate, the first layer comprising cadmium (Cd) and tellurium (Te), wherein the first layer is doped n-type;

a second layer adjacent to the first layer, the second layer comprising Cd and Te, wherein the second layer is doped p-type; and

a third layer formed of an n-p or p-n heterojunction or homojunction adjacent to said second layer, wherein said third layer is configured to generate electricity upon exposure to light.

13. The photovoltaic device of claim 12, further comprising a fourth layer comprising Zn between said glass substrate or superstrate and said first layer.

14. The photovoltaic device of claim 12, wherein said third layer is formed of a heterojunction.

15. The photovoltaic device of claim 12, wherein one or more of said first layer, second layer and third layer further comprise zinc.

16. The photovoltaic device of claim 12, further comprising a p-n or n-p tunnel junction between said second layer and said third layer.

17. The photovoltaic device of claim 12, further comprising a fourth layer comprising Sb adjacent to said third layer.

18. The photovoltaic device of claim 12, further comprising a fourth layer comprising Te adjacent to said third layer.

19. The photovoltaic device of claim 12, wherein one or more of said first layer, second layer and third layer are compositionally graded in Cd.

20. The photovoltaic device of claim 12, further comprising a metal contact adjacent to said third layer.