Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
First Claim
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1. A photovoltaic device, comprising:
- a glass substrate or superstrate;
a first layer adjacent to said glass superstrate or substrate, said first layer comprising tellurium (Te) and cadmium (Cd), wherein said first layer is doped n-type;
a second layer adjacent to said first layer, said second layer comprising Cd and Te, wherein said second layer is doped p-type; and
a third layer adjacent to said second layer, said third layer comprising Cd and Te, wherein said third layer is doped n-type or p-type.
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Abstract
A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
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Citations
20 Claims
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1. A photovoltaic device, comprising:
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a glass substrate or superstrate; a first layer adjacent to said glass superstrate or substrate, said first layer comprising tellurium (Te) and cadmium (Cd), wherein said first layer is doped n-type; a second layer adjacent to said first layer, said second layer comprising Cd and Te, wherein said second layer is doped p-type; and a third layer adjacent to said second layer, said third layer comprising Cd and Te, wherein said third layer is doped n-type or p-type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A photovoltaic device, comprising:
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a glass substrate or superstrate; a first layer adjacent to said glass superstrate or substrate, the first layer comprising cadmium (Cd) and tellurium (Te), wherein the first layer is doped n-type; a second layer adjacent to the first layer, the second layer comprising Cd and Te, wherein the second layer is doped p-type; and a third layer formed of an n-p or p-n heterojunction or homojunction adjacent to said second layer, wherein said third layer is configured to generate electricity upon exposure to light. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification