Microelectronic pressure sensor
First Claim
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1. A microelectronic pressure sensor, comprising:
- a substrate;
a MOSFET transistor including;
source and drain regions in the substrate;
a channel between the source and drain region in the substrate;
a mobile gate formed from a first material over the channel, the mobile gate having an upper surface and sidewalls; and
a first cavity that separates the mobile gate from the channel; and
a gate actuator formed from a second non-conductive material that is different from the first material, the gate actuator being formed above the mobile gate, the gate actuator being in contact with the upper surface and sidewalls of the mobile gate, an upper surface of the gate actuator being configured to receive a pressure from a physical object and to move said mobile gate toward the channel in response to the pressure on the upper surface of the gate actuator, the upper surface of the gate actuator being separated from the cavity by the mobile gate, the gate actuator being an elastic material that has a thickness between the upper surface of the mobile gate and the upper surface of the gate actuator, the thickness of the gate actuator being configured to vertically compress in a plurality of locations in response to the pressure, the plurality of locations corresponding to a plurality of locations on the object.
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Abstract
A microelectronic pressure sensor comprises a MOSFET transistor adapted with a mobile gate and a cavity between the mobile gate and a substrate. The sensor includes a gate actuator configured to move mobile gate in response to a pressure being exercised. A fingerprint recognition system includes a matrix of such sensors.
24 Citations
26 Claims
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1. A microelectronic pressure sensor, comprising:
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a substrate; a MOSFET transistor including; source and drain regions in the substrate; a channel between the source and drain region in the substrate; a mobile gate formed from a first material over the channel, the mobile gate having an upper surface and sidewalls; and a first cavity that separates the mobile gate from the channel; and a gate actuator formed from a second non-conductive material that is different from the first material, the gate actuator being formed above the mobile gate, the gate actuator being in contact with the upper surface and sidewalls of the mobile gate, an upper surface of the gate actuator being configured to receive a pressure from a physical object and to move said mobile gate toward the channel in response to the pressure on the upper surface of the gate actuator, the upper surface of the gate actuator being separated from the cavity by the mobile gate, the gate actuator being an elastic material that has a thickness between the upper surface of the mobile gate and the upper surface of the gate actuator, the thickness of the gate actuator being configured to vertically compress in a plurality of locations in response to the pressure, the plurality of locations corresponding to a plurality of locations on the object. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A process, comprising:
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measuring contours of a first surface of a body, the measuring including; moving mobiles gates of MOSFET transistors towards a channel of each transistor in response to pressure locally exercised on an upper surface of a gate actuator by the first surface of the body, the gate actuator being a first material, the first surface being above the upper surface of the gate actuator, the gate actuator being formed above the mobile gates, the mobile gates being a second non-conductive material that is different from the first material, the mobile gates each having an upper surface and sidewalls, the gate actuator being in contact with the upper surface and sidewalls of the mobile gates, the transistors each including a cavity that separates the mobile gate from the channel of the transistor, the upper surface of the gate actuator being separated from the cavity by the mobile gate, the gate actuator being an elastic material that has a thickness between the upper surface of the mobile gate and the upper surface of the gate actuator, the thickness of the gate actuator being configured to vertically compress in a plurality of locations in response to the pressure, the plurality of locations corresponding to a plurality of locations on the body; and converting the movement of the mobile gates that correspond to the plurality of locations into electrical quantities that correspond to relative distances between the mobile gates and the channels. - View Dependent Claims (15, 16, 17, 18)
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19. A process for manufacturing a microelectronic pressure sensor, comprising:
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forming a MOSFET transistor, the forming of the transistor including; forming source and drain regions in the substrate; forming a channel between the source and drain region in the substrate; forming a mobile gate over the channel from a first material; forming the mobile gate to have an upper surface and sidewalls; and forming a cavity that separates the mobile gate from the channel; and forming a gate actuator from a second non-conductive material that is different from the first material, the gate actuator being above the mobile gate, the gate actuator being in contact with the upper surface and sidewalls of the mobile gate, an upper surface of the gate actuator configured to receive a pressure from an object and to move said mobile gate towards the channel in response to a pressure on the upper surface of the gate actuator, the upper surface of the gate actuator being separated from the cavity by the mobile gate, the gate actuator being an elastic material that has a thickness between the upper surface of the mobile gate and the upper surface of the gate actuator, the thickness of the gate actuator being configured to vertically compress in a plurality of locations in response to the pressure, the plurality of locations corresponding to a plurality of locations on the object. - View Dependent Claims (20, 21, 22)
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23. A flat display system, comprising:
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a matrix arranged in rows and columns and including pixels at crossings of the rows and columns, respectively; and an arrangement of microelectronic pressure sensors formed on a substrate, the pressure sensors positioned between the matrix and the substrate, each microelectronic pressure sensor including; a MOSFET transistor including; source and drain regions in the substrate; a channel between the source and drain region in the substrate; a mobile gate of a first material formed over the channel, the mobile gate having an upper surface and sidewalls; and a cavity that separates the mobile gate from the channel; and a gate actuator formed of a second non-conductive material that is different from the first material, the gate actuator being formed above the mobile gate, the gate actuator being in contact with the upper surface and sidewalls of the mobile gate, an upper surface configured to receive a pressure from an object, the gate actuator configured to move the mobile gate towards the channel in response to the pressure on the upper surface, the upper surface of the gate actuator being separated from the cavity by the mobile gate, the gate actuator being an elastic material that has a thickness between the upper surface of the mobile gate and the upper surface of the gate actuator, the thickness of the gate actuator being configured to vertically compress in a plurality of locations in response to the pressure, the plurality of locations corresponding to a plurality of locations on the object. - View Dependent Claims (24, 25, 26)
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Specification