Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a pixel portion over a substrate, the pixel portion including a first transistor; and
a driver circuit portion over the substrate, the driver circuit portion including a second transistor,wherein the first transistor includes;
a first gate electrode layer over the substrate;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the gate insulating layer;
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer;
a first conductive layer on and in contact with a part of the first source electrode layer or a part of the first drain electrode layer;
a first oxide insulating layer over the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the first oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer, anda pixel electrode layer over the first oxide insulating layer, the pixel electrode layer electrically connected to the first conductive layer,wherein the second transistor includes;
a second gate electrode layer over the substrate;
the gate insulating layer over the second gate electrode layer;
a second oxide semiconductor layer over the gate insulating layer;
a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer; and
a second oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer and the second drain electrode layer, the second oxide insulating layer being in contact with the second oxide semiconductor layer,wherein each of the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the first oxide insulating layer, and the pixel electrode layer includes light-transmitting properties,wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, andwherein the material of the second source electrode layer and the second drain electrode layer is a conductive material having a lower resistance than the material of the first source electrode layer and the first drain electrode layer.
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Accused Products
Abstract
One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion including a first transistor; and a driver circuit portion over the substrate, the driver circuit portion including a second transistor, wherein the first transistor includes; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer; a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; a first conductive layer on and in contact with a part of the first source electrode layer or a part of the first drain electrode layer; a first oxide insulating layer over the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the first oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer, and a pixel electrode layer over the first oxide insulating layer, the pixel electrode layer electrically connected to the first conductive layer, wherein the second transistor includes; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the gate insulating layer; a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer; and a second oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer and the second drain electrode layer, the second oxide insulating layer being in contact with the second oxide semiconductor layer, wherein each of the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the first oxide insulating layer, and the pixel electrode layer includes light-transmitting properties, wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, and wherein the material of the second source electrode layer and the second drain electrode layer is a conductive material having a lower resistance than the material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor and a capacitor portion; and a driver circuit portion over the substrate, the driver circuit portion comprising a second transistor, wherein each of the first transistor and the second transistor comprises; a gate electrode layer; a gate insulating layer adjacent to the gate electrode layer, an oxide semiconductor layer adjacent to the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising a channel region; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer over and in contact with the oxide semiconductor layer, the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer is located between the gate insulating layer and the oxide insulating layer, wherein a pixel electrode layer is electrically connected to the drain electrode layer of the first transistor via a first conductive layer, wherein the source electrode layer and the drain electrode layer of the second transistor comprise the same material as the first conductive layer, and wherein each of the gate electrode layer, the source electrode layer, the drain electrode layer, and the capacitor portion in the pixel portion comprises light-transmitting properties. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification