Nitride semiconductor light-emitting device
First Claim
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1. A nitride semiconductor light-emitting device having an optical waveguide, the nitride semiconductor light-emitting device comprising, in the following order, at least:
- a first cladding layer;
an active layer; and
a second cladding layer,wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer;
wherein the nitride semiconductor comprises AlxInyGa1-x-yN, where 0<
x≦
0.82, 0<
y≦
0.18, and 0≦
1-x-y<
1;
wherein a material of the transparent conductor is one of tin-added indium oxide, antimony-added tin oxide, and zinc oxide;
wherein the transparent conductive layer has a film thickness greater than 100 nm.
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Abstract
A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.
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Citations
3 Claims
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1. A nitride semiconductor light-emitting device having an optical waveguide, the nitride semiconductor light-emitting device comprising, in the following order, at least:
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a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer; wherein the nitride semiconductor comprises AlxInyGa1-x-yN, where 0<
x≦
0.82, 0<
y≦
0.18, and 0≦
1-x-y<
1;wherein a material of the transparent conductor is one of tin-added indium oxide, antimony-added tin oxide, and zinc oxide; wherein the transparent conductive layer has a film thickness greater than 100 nm. - View Dependent Claims (2, 3)
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Specification