Method and apparatus improving gate oxide reliability by controlling accumulated charge

• US 8,954,902 B2
• Filed: 02/15/2011
• Issued: 02/10/2015
• Est. Priority Date: 07/11/2005
• Status: Expired

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: Peregrine Semiconductor Corporation (Murata Manufacturing Co Limited)
• Inventors: Stuber, Michael A., Brindle, Christopher N., Kelly, Dylan J., Kemerling, Clint L., Imthurn, George P., Burgener, Mark L., Dribinsky, Alexander, Kim, Tae Youn
• Primary Examiner(s): TAT, BINH C
• Application Number:
  US13/028,144
• Publication Number:
  US 20110227637A1
• Time in Patent Office: 1,456 Days
• Field of Search: 716100-104
• US Class Current: 716/100
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78615 with a body contact
• CPC Class Codes: H01L 29/78651 Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78657 SOS transistors
• CPC Class Codes: H03K 17/162 without feedback from the output circuit to the control circuit

Abstract

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

Claims

1. An RF switch, comprising:

a first RF port;

a second RF port;

a first switch transistor grouping coupled with the first and second RF ports, and controlled by a first switch control signal, the first switch transistor grouping comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;

a shunt transistor grouping coupled with the first RF port and with ground, and controlled by a shunt control signal, the shunt transistor grouping comprising a plurality of shunt NMOSFETs arranged in a stacked configuration, wherein at least one of the plurality of shunt NMOSFETs comprises a first body and a first accumulated charge sink (ACS) coupled with the first body and configured so that when the at least one shunt NMOSFET is disabled, a first negative bias voltage that is substantially negative with respect to ground applied to the first ACS substantially prevents accumulated charge from accumulating in the first body of the at least one shunt NMOSFET; and

a silicon-on-insulator substrate, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer of the silicon-on-insulator substrate so that when the first switch transistor grouping is enabled by the first switch control signal and the shunt transistor grouping is disabled by the shunt control signal, a signal on the first RF port is passed through to the second RF port, and when the first switch transistor grouping is disabled by the first switch control signal and the shunt transistor grouping is enabled by the shunt control signal, the signal on the first RF port is grounded.

2. The RF switch of claim 1, wherein at least one of the first plurality of switch NMOSFETs has a second body and a second accumulated charge sink (ACS) coupled with the second body and configured so that when the at least one switch NMOSFET is disabled, a second negative bias voltage that is substantially negative with respect to ground applied to the second ACS substantially prevents accumulated charge from accumulating in the second body of the at least one switch NMOSFET.

3. The RF switch of claim 2, wherein the at least one switch NMOSFET includes a gate, and wherein the gate of the at least one switch NMOSFET and the second ACS are coupled together and also coupled with the first switch control signal.

4. The RF switch of claim 2, wherein the at least one shunt NMOSFET includes a gate, and wherein the gate of the at least one shunt NMOSFET and the first ACS are coupled together and also coupled with the shunt control signal.

5. The RF switch of claim 2, wherein the at least one switch NMOSFET includes a gate, and wherein a diode is coupled between the at least one switch NMOSFET gate and the second ACS such that the diode prevents current flow into the second body when the at least one switch NMOSFET is enabled.

6. The RF switch of claim 2, wherein the at least one shunt NMOSFET includes a gate, and wherein a diode is coupled between the at least one shunt NMOSFET gate and the first ACS such that the diode prevents current flow into the first body when the at least one shunt NMOSFET is enabled.

7. The RF switch of claim 2, wherein the at least one switch NMOSFET includes a gate, and wherein an electrical device is coupled between the gate and the second ACS such that the electrical device prevents current flow into the second body when the at least one switch NMOSFET is enabled.

8. The RF switch of claim 2, wherein the at least one shunt NMOSFET includes a gate, and wherein an electrical device is coupled between the gate and the first ACS such that the electrical device prevents current flow into the first body when the at least one shunt NMOSFET is enabled.

9. The RF switch of claim 2, wherein the couplings comprise at least one of the following coupling types:

capacitive;

inductive;

electro-magnetic; and

resistive coupling, including a “

short”

resistive coupling wherein the resistive value of the coupling comprises approximately zero ohms.

10. The RF switch of claim 2, wherein the first and second negative bias voltages are substantially more negative than the lowest voltage value of ground, a threshold voltage (Vth), a source voltage (Vs), and a drain voltage (Vd).

11. The RF switch of claim 2, wherein the first and second negative bias voltages are at least one volt more negative than the lowest voltage value of ground, a threshold voltage (Vth), a source voltage (Vs), and a drain voltage (Vd).

12. The RF switch of claim 2, wherein each NMOSFET has an associated and respective gate voltage Vg, and wherein the associated gate voltage is at least one volt more negative than the lowest voltage value of ground, a threshold voltage (Vth), a source voltage (Vs), and a drain voltage (Vd).

13. The RF switch of claim 2, further comprising:

a third RF port; and

a second switch transistor grouping coupled with the second and third RF ports wherein the second switch transistor grouping comprises a second plurality of switch NMOSFETs arranged in a stacked configuration, wherein at least one of the second plurality of switch NMOSFETs has a third body and a third accumulated charge sink (ACS) coupled to the third body and configured so that when the at least one switch NMOSFET of the second plurality of switch NMOSFETs is disabled, a third negative bias voltage that is substantially negative with respect to ground applied to the third ACS substantially prevents accumulated charge from accumulating in the third body.

14. The RF switch of claim 13, wherein preventing accumulated charge from accumulating in the third body of the at least one switch NMOSFET improves linearity of the signal passed through to the second RF port.

15. The RF switch of claim 1, wherein the shunt transistor grouping comprises at least three NMOSFETs.

16. The RF switch of claim 1, wherein the shunt transistor grouping comprises at least six NMOSFETs.

17. The RF switch of claim 1, wherein the shunt transistor grouping comprises at least nine NMOSFETs.

18. The RF switch of claim 2, wherein the first switch transistor grouping comprises at least three NMOSFETs.

19. The RF switch of claim 2, wherein the first switch transistor grouping comprises at least six NMOSFETs.

20. The RF switch of claim 2, wherein the first switch transistor grouping comprises at least nine NMOSFETs.

21. The RF switch of claim 2, wherein the first switch transistor grouping comprises at least twelve NMOSFETs.

22. The RF switch of claim 2, wherein the first switch transistor grouping comprises at least fifteen NMOSFETs.

23. The RF switch of claim 13, wherein the second switch transistor grouping comprises at least three NMOSFETs.

24. The RF switch of claim 13, wherein the second switch transistor grouping comprises at least six NMOSFETs.

25. The RF switch of claim 13, wherein the second switch transistor grouping comprises at least nine NMOSFETs.

26. The RF switch of claim 13, wherein the second transistor grouping comprises at least twelve NMOSFETs.

27. The RF switch of claim 13, wherein the second switch transistor grouping comprises at least fifteen NMOSFETs.

28. The RF switch of claim 2, wherein the at least one shunt NMOSFET further comprises an electrical contact region proximate to the first ACS, and wherein the electrical contact region facilitates coupling to the first body.

29. The RF switch of claim 2, wherein the at least one switch NMOSFET further comprises an electrical contact region proximate to the second ACS, and wherein the electrical contact region facilitates coupling to the second body.

30. The RF switch of claim 13, wherein the at least one second switch NMOSFET further comprises an electrical contact region proximate to the third ACS, and wherein the electrical contact region facilitates coupling to the third body.

31. The RF switch according to claim 1, wherein the switch and shunt control signals enabling the NMOSFETs have a voltage of approximately +2.5 Volts.

32. The RF switch according to claim 1, wherein the switch and shunt control signals disabling the NMOSFETs have a voltage of approximately −

2.5 Volts.

33. The RF switch according to claim 1, wherein the NMOSFETs comprise partially depleted NMOSFETs.

34. The RF switch according to claim 1, wherein the NMOSFETs comprise fully depleted NMOSFETs.

35. The RF switch of claim 1, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

36. The RF switch of claim 2, wherein the second body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

37. The RF switch of claim 13, wherein the third body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

38. The RF switch of claim 10, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

39. The RF switch of claim 11, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

40. The RF switch of claim 12, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

41. The RF switch of claim 1, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

42. The RF switch of claim 2, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

43. The RF switch of claim 13, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

44. The RF switch of claim 10, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

45. The RF switch of claim 11, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

46. The RF switch of claim 12, wherein the first switch transistor grouping and the shunt transistor grouping are fabricated in a silicon layer on an insulating layer, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the insulating layer.

47. A circuit routing RF signals, comprising:

a first RF port;

a second RF port;

a third RF port;

a plurality of stacked shunt NMOSFETs coupled with the first RF port and ground, and controlled by a shunt control signal, wherein at least one of the plurality of stacked shunt NMOSFETs comprises a first body and a first accumulated charge sink (ACS) coupled with the first body and configured so that when the at least one shunt NMOSFET is disabled, a first negative bias voltage that is substantially negative with respect to ground applied to the first ACS substantially prevents accumulated charge from accumulating in the first body of the at least one shunt NMOSFET;

a first plurality of first stacked switch NMOSFETs coupled with the first and second RF ports, and controlled by a first switch control signal, wherein at least one of the first plurality of first switch NMOSFETs has a second body and a second accumulated charge sink (ACS) coupled with the second body and configured so that when the at least one first switch NMOSFET is disabled, a second negative bias voltage that is substantially negative with respect to ground applied to the second ACS substantially prevents accumulated charge from accumulating in the second body of the at least one first switch NMOSFET;

a second plurality of second stacked switch NMOSFETs coupled with the second and third RF ports, wherein at least one of the second plurality of second switch NMOSFETs has a third body and a third accumulated charge sink (ACS) coupled to the third body and configured so that when the at least one second switch NMOSFET is disabled, a third negative bias voltage that is substantially negative with respect to ground applied to the third ACS substantially prevents accumulated charge from accumulating in the third body; and

a silicon-on-insulator substrate, wherein the shunt, first switch and second switch NMOSFETs are fabricated in a silicon layer of the silicon-on-insulator substrate.

48. The circuit of claim 47, wherein when the first switch NMOSFETs are enabled by the first switch control signal, the shunt NMOSFETs are disabled by the shunt control signal and the at least one second switch NMOSFET is disabled, a signal on the first RF port is passed through to the second RF port, and wherein preventing accumulated charge from accumulating in the third body of the at least one second switch NMOSFET improves linearity of the signal passed through to the second port.

49. The circuit of claim 47, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

50. The circuit of claim 48, wherein the silicon layer of the silicon-on-insulator substrate has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

51. An RF switch, comprising:

a first RF port;

a second RF port;

a first switch transistor grouping coupled to the first RF port and to the second RF port and comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;

a first shunt transistor grouping coupled to the first RF port and to ground and comprising a first plurality of shunt NMOSFETs arranged in a stacked configuration,

wherein at least one of the first plurality of shunt NMOSFETs comprises a first gate, a first source, a first drain, a first body, and a first accumulated charge sink (ACS) coupled to the first body,

wherein a first ACS bias voltage is applied to the first ACS,

wherein the first ACS is in electrical communication with the first body and is configured so that when the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs is operated in an off-state (non-conducting state), the first ACS bias voltage is substantially negative with respect to ground to substantially prevent accumulated charge from accumulating in the first body of the at least one shunt NMOSFET; and

wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated on a silicon-on-insulator substrate.

52. The RF switch of claim 51, wherein preventing accumulated charge from accumulating in the first body of the at least one shunt NMOSFET improves linearity of the at least one shunt NMOSFET.

53. The RF switch of claim 52, wherein the first ACS is positioned proximate a first distal end of the first body.

54. The RF switch of claim 52, wherein the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs further comprises a first electrical contact region, wherein the first electrical contact region and the first ACS are coterminous.

55. The RF switch of claim 54, wherein the first electrical contact region is positioned proximate to and in electrical contact with the first ACS.

56. The RF switch of claim 52, wherein the first ACS is electrically coupled to the gate.

57. The RF switch of claim 52, wherein the first ACS bias voltage applied to the first ACS is negative with respect to ground and has a magnitude of approximately 2.5V in an off-state (non-conducting state).

58. The RF switch of claim 57, wherein the first ACS bias voltage applied to the first ACS has a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

59. The RF switch of claim 51, further comprising:

a third RF port;

a second switch transistor grouping coupled to the third RF port and to the second RF port and comprising a second plurality of switch NMOSFETs arranged in a stacked configuration,

wherein at least one of the second plurality of switch NMOSFETs comprises a second gate, a second source, a second drain, a second body, and a second accumulated charge sink (ACS) coupled to the second body,

wherein a second ACS bias voltage is applied to the second ACS,

wherein the second ACS is in electrical communication with the second body and is configured so that when the at least one switch NMOSFET of the second plurality of switch NMOSFETs is operated in an off-state (non-conducting state), the second ACS bias voltage is substantially negative with respect to ground to substantially prevent accumulated charge from accumulating in the second body of the at least one switch NMOSFET of the second plurality of switch NMOSFETs; and

wherein the second switch transistor grouping is fabricated on the silicon-on-insulator substrate.

60. The RF switch of claim 59, wherein preventing accumulated charge from accumulating in the second body of the at least one switch NMOSFET of the second plurality of switch NMOSFETs improves linearity of the signal passed through to the second RF port.

61. The RF switch of claim 60, wherein the first ACS is positioned proximate a first distal end of the first body and the second ACS is positioned proximate a second distal end of the second body.

62. The RF switch of claim 61, wherein the first electrical contact region is positioned proximate to and in electrical contact with the first ACS, and wherein the second electrical contact region is positioned proximate to and in electrical contact with the second ACS.

63. The RF switch of claim 60, wherein the first ACS and second ACS are electrically coupled to the gate.

64. The RF switch of claim 60, wherein the first ACS bias voltage applied to the first ACS and the second ACS bias voltage applied to the second ACS are negative with respect to ground and have a magnitude of approximately 2.5V in an off-state (non-conducting state).

65. The RF switch of claim 64, wherein the first ACS bias voltage applied to the first ACS and the second ACS bias voltage applied to the second ACS have a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

66. The RF switch of claim 60, wherein the first ACS bias voltage and the second ACS bias voltage have the same magnitude.

67. The RF switch of claim 51, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

68. The RF switch of claim 51, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer on the silicon-on-insulator substrate, and wherein the switch NMOSFETs and shunt NMOSFETs have associated and corresponding sources and drains, and wherein the sources and drains of the switch and shunt NMOSFETs extend substantially proximate the substrate.

69. The RF switch of claim 51, wherein the first body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

70. The RF switch of claim 59, wherein the second body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

71. An RF switch, comprising:

a first RF port;

a second RF port;

a first switch transistor grouping coupled to the first RF port and to the second RF port and comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;

a first shunt transistor grouping coupled to the first RF port and to ground and comprising a first plurality of shunt NMOSFETs arranged in a stacked configuration,

wherein at least one of the first plurality of shunt NMOSFETs comprises a first gate, a first source, a first drain, a first body, and a first accumulated charge sink (ACS) coupled to the first body,

wherein a first ACS bias voltage is applied to the first ACS,

wherein the first ACS is in electrical communication with the first body and is configured so that when the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs is operated in an off-state (non-conducting state), the first ACS bias voltage is substantially more negative than the lesser of a first source bias voltage applied to the first source and a first drain bias voltage applied to the first drain to substantially prevent accumulated charge from accumulating in the first body of the at least one shunt NMOSFET; and

wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated on a silicon-on-insulator substrate.

72. The RF switch of claim 71, wherein preventing accumulated charge from accumulating in the first body of the at least one shunt NMOSFET improves linearity of the at least one shunt NMOSFET.

73. The RF switch of claim 72, wherein the first ACS is positioned proximate a first distal end of the first body.

74. The RF switch of claim 72, wherein the first ACS is electrically coupled to the gate.

75. The RF switch of claim 72, wherein the first ACS bias voltage applied to the first ACS is negative with respect to ground and has a magnitude of approximately 2.5V in an off-state (non-conducting state).

76. The RF switch of claim 75, wherein the first ACS bias voltage applied to the first ACS has a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

77. The RF switch of claim 71, further comprising:

a third RF port;

a second switch transistor grouping coupled to the third RF port and to the second RF port and comprising a second plurality of switch NMOSFETs arranged in a stacked configuration,

wherein at least one of the second plurality of switch NMOSFETs comprises a second gate, a second source, a second drain, a second body, and a second accumulated charge sink (ACS) coupled to the second body,

wherein a second ACS bias voltage is applied to the second ACS,

wherein the second ACS is in electrical communication with the second body and is configured so that when the at least one switch NMOSFET of the second plurality of switch NMOSFETs is operated in an off-state (non-conducting state), the second ACS bias voltage is substantially more negative than the lesser of a second source bias voltage applied to the second source and a second drain bias voltage applied to the second drain to substantially prevent accumulated charge from accumulating in the second body of the at least one switch NMOSFET of the second plurality of switch NMOSFETs; and

wherein the second switch transistor grouping is fabricated on the silicon-on-insulator substrate.

78. The RF switch of claim 77, wherein preventing accumulated charge from accumulating in the second body of the at least one switch NMOSFET of the second plurality of switch NMOSFETs improves linearity of the signal passed through to the second RF port.

79. The RF switch of claim 78, wherein the first ACS is positioned proximate a first distal end of the first body and the second ACS is positioned proximate a second distal end of the second body.

80. The RF switch of claim 78, wherein the first ACS and second ACS are electrically coupled to the gate.

81. The RF switch of claim 78, wherein the first ACS bias voltage applied to the first ACS and the second ACS bias voltage applied to the second ACS are negative with respect to ground and have a magnitude of approximately 2.5V in an off-state (non-conducting state).

82. The RF switch of claim 81, wherein the first ACS bias voltage applied to the first ACS and the second ACS bias voltage applied to the second ACS have a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

83. The RF switch of claim 78, wherein the first ACS bias voltage and the second ACS bias voltage have the same magnitude.

84. The RF switch of claim 71, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

85. The RF switch of claim 71, wherein the first body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

86. The RF switch of claim 71, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer on the substrate, and wherein the first source and first drain extend substantially proximate the substrate.

87. The RF switch of claim 78, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

88. An RF switch, comprising:

a first RF port;

a second RF port;

a first switch transistor grouping coupled to the first RF port and to the second RF port and comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;

a first shunt transistor grouping coupled to the first RF port and to ground and comprising a first plurality of shunt NMOSFETs arranged in a stacked configuration,

wherein at least one of the first plurality of shunt NMOSFETs comprises a first gate, a first source, a first drain, a first body, a first accumulated charge sink (ACS) coupled to the first body, wherein the first ACS is positioned proximate a first distal end of the first body and is in electrical communication with the first body, and a second accumulated charge sink (ACS) coupled to the first body, wherein the second ACS is positioned proximate a second distal end of the first body and is in electrical communication with the first body,

wherein a first ACS bias voltage is applied to the first ACS and second ACS,

wherein, when the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs is configured to operate in an off-state (non-conducting state), the first ACS bias voltage is substantially negative with respect to ground to substantially prevent accumulated charge from accumulating in the first body of the at least one shunt NMOSFET; and

wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated on a silicon-on-insulator substrate.

89. The RF switch of claim 88, wherein preventing accumulated charge from accumulating in the first body of the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs improves linearity of the at least one shunt NMOSFET.

90. The RF switch of claim 89, further comprising:

a first electrical contact region positioned proximate to and in electrical communication with the first ACS, wherein the first electrical contact region facilitates electrical coupling to the first ACS; and

a second electrical contact region positioned proximate to and in electrical communication with the second ACS, wherein the second electrical contact region facilitates electrical coupling to the second ACS.

91. The RF switch of claim 90, wherein the first ACS and second ACS are electrically coupled to the gate.

92. The RF switch of claim 89, wherein the first ACS bias voltage applied to the first ACS and the second ACS are negative with respect to ground and have a magnitude of approximately 2.5V in an off-state (non-conducting state).

93. The RF switch of claim 92, wherein the first ACS bias voltage applied to the first ACS and the ACS has a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

94. The RF switch of claim 88, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

95. The RF switch of claim 88, wherein the first body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

96. The RF switch of claim 88, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer on the substrate, and wherein the first source and first drain extend substantially proximate the substrate.

97. An RF switch, comprising:

a first RF port;

a second RF port;

a first switch transistor grouping coupled to the first RF port and to the second RF port and comprising a first plurality of switch NMOSFETs arranged in a stacked configuration;

a first shunt transistor grouping coupled to the first RF port and to ground and comprising a first plurality of shunt NMOSFETs arranged in a stacked configuration,

wherein at least one of the first plurality of shunt NMOSFETs comprises a first gate, a first source, a first drain, a first body, a first accumulated charge sink (ACS) coupled to the first body, wherein the first ACS is positioned proximate a first distal end of the first body and is in electrical communication with the first body, and a second accumulated charge sink (ACS) coupled to the first body, wherein the second ACS is positioned proximate a second distal end of the first body and is in electrical communication with the first body,

wherein a first ACS bias voltage is applied to the first ACS and second ACS,

wherein, when the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs is configured to operate in an off-state (non-conducting state), the first ACS bias voltage is substantially more negative than the lesser of a first source bias voltage applied to the first source and a first drain bias voltage applied to the first drain to substantially prevent accumulated charge from accumulating in the first body of the at least one shunt NMOSFET; and

wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated on a silicon-on-insulator substrate.

98. The RF switch of claim 97, wherein preventing accumulated charge from accumulating in the first body of the at least one shunt NMOSFET of the first plurality of shunt NMOSFETs improves linearity of the at least one shunt NMOSFET.

99. The RF switch of claim 98, further comprising:

a first electrical contact region positioned proximate to and in electrical communication with the first ACS, wherein the first electrical contact region facilitates electrical coupling to the first ACS; and

a second electrical contact region positioned proximate to and in electrical communication with the second ACS, wherein the second electrical contact region facilitates electrical coupling to the second ACS.

100. The RF switch of claim 99, wherein the first ACS and second ACS are electrically coupled to the gate.

101. The RF switch of claim 98, wherein the first ACS bias voltage applied to the first ACS and the second ACS has a voltage level in an on-state (conducting state) that is different from a voltage level in an off-state (non-conducting state).

102. The RF switch of claim 97, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer having a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

103. The RF switch of claim 98, wherein the first body has a thickness between approximately 100 angstroms to approximately 2,000 angstroms.

104. The RF switch of claim 97, wherein the first switch transistor grouping and the first shunt transistor grouping are fabricated in a silicon layer on the substrate, and wherein the first source and first drain extend substantially proximate the substrate.