Semiconductor apparatus
First Claim
1. A semiconductor apparatus comprising:
- a drain region of a first conductivity type;
a drain electrode electrically coupled to the drain region;
a semiconductor layer of the first conductivity type formed onto the drain region, the semiconductor layer having a first impurity concentration;
a source region of the first conductivity type formed on the semiconductor layer, the source region having a second impurity concentration greater than the first impurity concentration;
a first source electrode electrically coupled to the source region;
a gate electrode formed via an insulating layer, the gate electrode having one end and another end, the one end being in a depth of the source region, and the other end being in a depth of the semiconductor layer or the drain region;
a second source electrode provided in the semiconductor layer under the gate electrodes via an insulating layer;
a first portion extending downward from a surface of the semiconductor layer to have a first depth, the first portion interiorly including the gate electrode and including the second source electrode under the gate electrode; and
a second portion extending downward from a surface of the semiconductor layer to have a second depth smaller than the first depth, the second portion interiorly including the gate electrode alone, whereina second spacing in between a plurality of the second source electrodes is configured larger than a first spacing in between a plurality of the gate electrodes.
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Accused Products
Abstract
A semiconductor apparatus includes a drain region of a first-conductivity type, a drain electrode electrically coupled to the drain region, and a semiconductor layer of the first-conductivity type formed onto the drain region and having a first impurity concentration. The semiconductor apparatus further includes: a source region of the first-conductivity type formed on the semiconductor layer and having a second impurity concentration; a first source electrode electrically coupled to the source region; and a gate electrode formed via an insulating layer. The one end of the gate electrode is in a depth of the source region, and the other end is in a depth of the semiconductor layer or the drain region. A second source electrode is provided in the semiconductor layer under the gate electrodes via an insulating layer. A second spacing between the second source electrodes is larger than a first spacing between the gate electrodes.
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Citations
6 Claims
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1. A semiconductor apparatus comprising:
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a drain region of a first conductivity type; a drain electrode electrically coupled to the drain region; a semiconductor layer of the first conductivity type formed onto the drain region, the semiconductor layer having a first impurity concentration; a source region of the first conductivity type formed on the semiconductor layer, the source region having a second impurity concentration greater than the first impurity concentration; a first source electrode electrically coupled to the source region; a gate electrode formed via an insulating layer, the gate electrode having one end and another end, the one end being in a depth of the source region, and the other end being in a depth of the semiconductor layer or the drain region; a second source electrode provided in the semiconductor layer under the gate electrodes via an insulating layer; a first portion extending downward from a surface of the semiconductor layer to have a first depth, the first portion interiorly including the gate electrode and including the second source electrode under the gate electrode; and a second portion extending downward from a surface of the semiconductor layer to have a second depth smaller than the first depth, the second portion interiorly including the gate electrode alone, wherein a second spacing in between a plurality of the second source electrodes is configured larger than a first spacing in between a plurality of the gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification