Elemental semiconductor material contact for high electron mobility transistor
First Claim
1. A semiconductor structure comprising a high electron mobility transistor (HEMT), wherein said HEMT comprises:
- a substrate comprising a stack, from bottom to top, of a substrate compound semiconductor layer and a top compound semiconductor layer;
a gate electrode comprising a lower vertical portion having a bottommost surface contacting a topmost surface of said top compound semiconductor layer and an upper horizontal portion overlying said lower vertical portion and extending beyond sidewalls of said lower vertical portion;
a source region embedded in a first portion of said substrate;
a drain region embedded in a second portion of said substrate and laterally spaced from said source region, wherein said first portion is laterally spaced from said second portion by a width of said upper horizontal portion of said gate electrode, and wherein each of said source region and said drain region comprises at least one elemental semiconductor material; and
a dielectric material layer laterally contacting said lower vertical portion of said gate electrode, wherein a first sidewall of said dielectric material layer is vertically coincident with a first sidewall of said upper horizontal portion of said gate electrode, and a second sidewall of said dielectric material layer is vertically coincident with a second sidewall of said upper horizontal portion of said gate electrode.
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Accused Products
Abstract
Portions of a top compound semiconductor layer are recessed employing a gate electrode as an etch mask to form a source trench and a drain trench. A low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material in the source trench and the drain trench. Metallization is performed on physically exposed surfaces of the elemental semiconductor material portions in the source trench and the drain trench by depositing a metal and inducing interaction with the metal and the at least one elemental semiconductor material. A metal semiconductor alloy of the metal and the at least one elemental semiconductor material can be performed at a temperature lower than 600° C. to provide a high electron mobility transistor with a well-defined device profile and reliable metallization contacts.
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Citations
13 Claims
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1. A semiconductor structure comprising a high electron mobility transistor (HEMT), wherein said HEMT comprises:
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a substrate comprising a stack, from bottom to top, of a substrate compound semiconductor layer and a top compound semiconductor layer; a gate electrode comprising a lower vertical portion having a bottommost surface contacting a topmost surface of said top compound semiconductor layer and an upper horizontal portion overlying said lower vertical portion and extending beyond sidewalls of said lower vertical portion; a source region embedded in a first portion of said substrate; a drain region embedded in a second portion of said substrate and laterally spaced from said source region, wherein said first portion is laterally spaced from said second portion by a width of said upper horizontal portion of said gate electrode, and wherein each of said source region and said drain region comprises at least one elemental semiconductor material; and a dielectric material layer laterally contacting said lower vertical portion of said gate electrode, wherein a first sidewall of said dielectric material layer is vertically coincident with a first sidewall of said upper horizontal portion of said gate electrode, and a second sidewall of said dielectric material layer is vertically coincident with a second sidewall of said upper horizontal portion of said gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification