Method and system for design of a reticle to be manufactured using variable shaped beam lithography
First Claim
Patent Images
1. A method for optical proximity correction (OPC) or mask data processing (MDP) comprising:
- inputting an input pattern;
determining a plurality of charged particle beam shots that can approximately form a target pattern on a reticle, wherein the target pattern is an OPC-compensated version of the input pattern;
simulating a reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; and
calculating a substrate image which will be formed on a substrate using an optical lithographic process with the simulated reticle pattern, wherein the simulating and the calculating are performed on a computing hardware device.
0 Assignments
0 Petitions
Accused Products
Abstract
A method for optical proximity correction (OPC) is disclosed, in which a set of VSB shots is determined, where the set of shots can approximately form a target reticle pattern that is an OPC-compensated version of an input pattern. The set of shots is simulated to create a simulated reticle pattern. A substrate image is calculated, based on using the simulated reticle pattern in an optical lithographic process to form the substrate image. A system for OPC is also disclosed.
-
Citations
21 Claims
-
1. A method for optical proximity correction (OPC) or mask data processing (MDP) comprising:
-
inputting an input pattern; determining a plurality of charged particle beam shots that can approximately form a target pattern on a reticle, wherein the target pattern is an OPC-compensated version of the input pattern; simulating a reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; and calculating a substrate image which will be formed on a substrate using an optical lithographic process with the simulated reticle pattern, wherein the simulating and the calculating are performed on a computing hardware device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A system for optical proximity correction (OPC) or mask data processing (MDP) comprising:
-
a device configured to input an input pattern; a device configured to determine a plurality of charged particle beam shots that can approximately form a target pattern on a reticle, wherein the target pattern is an OPC-compensated version of the input pattern; a device configured to simulate a reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; and a device configured to calculate a substrate image which will be formed on a substrate using an optical lithographic process with the simulated reticle pattern. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
-
Specification