Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
First Claim
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1. A semiconductor device, comprising:
- an interlayer insulating layer formed on a substrate and including a trench;
a gate electrode formed in the trench and including a first metal layer and a second metal layer, the first metal layer formed along a side and a bottom surface of the trench and the second metal layer filling a space formed by the first metal layer;
a gate dielectric film formed between the substrate and the gate electrode;
a first gate spacer including silicon nitride formed on the sidewall of the gate electrode and the gate dielectric film;
a second gate spacer formed on the first gate spacer and having a dielectric constant lower than the dielectric constant of silicon nitride;
a third spacer formed on the second gate spacer; and
an elevated source/drain formed in a recess formed in the substrate and including SiGe,wherein the first gate spacer directly contacts the gate dielectric film, and a top surface of the elevated source/drain is higher than a top surface of the gate dielectric film under the gate electrode.
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Abstract
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
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Citations
18 Claims
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1. A semiconductor device, comprising:
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an interlayer insulating layer formed on a substrate and including a trench; a gate electrode formed in the trench and including a first metal layer and a second metal layer, the first metal layer formed along a side and a bottom surface of the trench and the second metal layer filling a space formed by the first metal layer; a gate dielectric film formed between the substrate and the gate electrode; a first gate spacer including silicon nitride formed on the sidewall of the gate electrode and the gate dielectric film; a second gate spacer formed on the first gate spacer and having a dielectric constant lower than the dielectric constant of silicon nitride; a third spacer formed on the second gate spacer; and an elevated source/drain formed in a recess formed in the substrate and including SiGe, wherein the first gate spacer directly contacts the gate dielectric film, and a top surface of the elevated source/drain is higher than a top surface of the gate dielectric film under the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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an interlayer insulating layer formed on a substrate and including a trench; a gate electrode formed in the trench and including a first metal layer and a second metal layer, the first metal layer formed along a side and a bottom surface of the trench and the second metal layer filling a space formed by the first metal layer; a gate dielectric film formed between the substrate and the gate electrode; a first gate spacer including silicon nitride formed on the sidewall of the gate electrode and the gate dielectric film, the first gate spacer having a bottom portion protruding away from the sidewall of the gate electrode; a second gate spacer formed on the first gate spacer and having a dielectric constant lower than the dielectric constant of silicon nitride; a third spacer formed on the second gate spacer; and an elevated source/drain formed in a recess formed in the substrate and including SiGe, wherein the first gate spacer directly contacts the gate dielectric film, and a top surface of the elevated source/drain is higher than a top surface of the gate dielectric film under the gate electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification