Method of testing semiconductor device
First Claim
1. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure, said method comprising:
- a first test step of testing said semiconductor device, as a result of said first test step a top surface layer of said termination structure is polarized;
a charge removal step of, after said first test step, removing a static charge from said top surface layer of said termination structure, said top surface layer being located on said substrate and formed of an insulating film and/or a semi-insulating film, wherein said charge removal step includes grounding said top surface layer by bringing a grounded device into contact with said top surface layer to thereby remove said static charge; and
a second test step of, after said charge removal step, testing dielectric strength of said semiconductor device.
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Abstract
A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, the cell structure having a main current flowing therethrough, the termination structure surrounding the cell structure, the method includes a first test step of testing dielectric strength of the semiconductor device, a charge removal step of, after the first test step, removing charge from a top surface layer of the termination structure, the top surface layer being located on the substrate and formed of an insulating film or a semi-insulating film, and a second test step of, after the charge removal step, testing dielectric strength of the semiconductor device.
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Citations
14 Claims
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1. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure, said method comprising:
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a first test step of testing said semiconductor device, as a result of said first test step a top surface layer of said termination structure is polarized; a charge removal step of, after said first test step, removing a static charge from said top surface layer of said termination structure, said top surface layer being located on said substrate and formed of an insulating film and/or a semi-insulating film, wherein said charge removal step includes grounding said top surface layer by bringing a grounded device into contact with said top surface layer to thereby remove said static charge; and a second test step of, after said charge removal step, testing dielectric strength of said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure and having on a top surface thereof a top surface layer formed of an insulating film and/or a semi-insulating film, said method comprising:
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a charge removal step of removing a static charge from said top surface layer, wherein said charge removal step includes grounding said top surface layer by bringing a grounded device into contact with said top surface layer to thereby remove said static charge; and a test step of, after said charge removal step, testing dielectric strength of said semiconductor device. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure and having on a top surface thereof a top surface layer which is formed of an insulating film and/or a semi-insulating film and which is covered with a sealing material, said method comprising:
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a sealing material removal step of removing said sealing material to expose said top surface layer; a charge removal step of, after said sealing material removal step, removing a static charge from said top surface layer, wherein said charge removal step includes grounding said to surface layer by bringing a grounded device into contact with said top surface layer to thereby remove said static charge; and a test step of, after said charge removal step, testing dielectric strength of said semiconductor device. - View Dependent Claims (14)
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Specification