Light emitting device

• US 9,537,056 B2
• Filed: 04/10/2014
• Issued: 01/03/2017
• Est. Priority Date: 02/18/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Bae, Jung Hyeok, Jeong, Young Kyu, Park, Kyung Wook, Park, Duk Hyun
• Primary Examiner(s): Page, Dale E
• Application Number:
  US14/250,039
• Publication Number:
  US 20140252394A1
• Time in Patent Office: 999 Days
• Field of Search: 257/E21.121, 257/E33.001, 257 98-100, 257/619, 257/620, 257/626, 257/632, 257/782, 438/106, 438/113, 438/458, 438/459, 438/462, 438/463, 438/465, 438/513, 438/798, 438/977, 438/FOR.117
• US Class Current: 1/1
• CPC Class Codes: C23C 16/513 using plasma jets
• CPC Class Codes: C23C 4/08 containing only metal elements C23C4/073 takes precedence
• CPC Class Codes: C23C 4/134 Plasma spraying
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/0331 for lift-off processes
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/27 : Manufacturing methods
• CPC Class Codes: H01L 2224/27418 : Spray coating
• CPC Class Codes: H01L 2224/27622 : Photolithography
• CPC Class Codes: H01L 2224/29111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/29139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/8381 : involving forming an intermetallic compound at the bonding interface
• CPC Class Codes: H01L 2224/8382 : Diffusion bonding
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/743 : Apparatus for manufacturing layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/074 : Stacked arrangements of non-apertured devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H05H 1/42 : with provisions for introducing materials into the plasma, e.g. powder, liquid arc stabilising or constricting arrangements H05H1/3405; coaxial protecting fluids H05H1/341; electrostatic spraying, spraying apparatus with means for charging the spray electrically B05B5/00 ; cf. B23K9/324, B05B7/22
• CPC Class Codes: H05K 2203/1344 : Spraying small metal particles or droplets of molten metal

Abstract

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Claims

1. A light emitting device comprising:

a conductive support member;

a light emitting structure on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer between the first conductive type semiconductor layer and the conductive support member, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

an electrode layer including a plurality of conductive layers between the conductive support member and the light emitting structure;

a protective member between the conductive support member and the light emitting structure;

a first electrode including a first portion on an upper surface of the first conductive type semiconductor layer and a second portion on a top surface of the protective member; and

an insulation layer between a surface of the light emitting structure and the first electrode,

wherein the protective member includes a first portion between the light emitting structure and the conductive support member, and a second portion between the conductive support member and the second portion of the first electrode,

wherein the second portion of the first electrode is vertically overlapped with the second portion of the protective member,

wherein a side surface of the light emitting structure includes an inclined structure,

wherein the first portion of the protective member is between the second conductive type semiconductor layer and the conductive support member,

wherein the second portion of the first electrode is located at a different position from the first portion of the first electrode,

wherein the first electrode comprises a third portion connected between the first and the second portions of the first electrode,

wherein the third portion of the first electrode is contacted with the insulation layer,

wherein the third portion of the first electrode is disposed on a plurality of side surfaces of the light emitting structure, and

wherein the second portion of the first electrode is disposed on different regions of the second portion of the protective member.

2. The light emitting device of claim 1, wherein the first electrode includes at least one of a metal material and a light-transparent material,

wherein the first conductive type semiconductor layer includes an n type semiconductor layer, and

wherein the second conductive type semiconductor layer includes a p-type semiconductor layer.

3. The light emitting device of claim 1, further comprising a bonding layer on the portion of the first electrode,

wherein the first electrode includes a different material from the bonding layer.

4. The light emitting device of claim 3, wherein the bonding layer is disposed on the second portion of the protective member and is connected to the portion of the first electrode.

5. The light emitting device of claim 1, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

6. The light emitting device of claim 1, wherein the electrode layer includes a reflective layer between the protective layer and the conductive support member, and an adhesion layer between the reflective layer and the conductive support member,

wherein the portion of the first electrode is vertically overlapped with an outer portion of the reflective layer.

7. The light emitting device of claim 1, wherein the third portion of the first electrode is vertically overlapped with the first portion of the protective member.

8. The light emitting device of claim 1, further comprising a connection electrode connected to the first electrode and on a sidewall of the conductive support member, and an insulating body on the sidewall of the conductive support member and the connection electrode.

9. The light emitting device of claim 1, wherein the first electrode includes a first opening, and

wherein a portion of the upper surface of the first conductive type semiconductor layer is under the first opening of the first electrode and is exposed through the first opening of the first electrode.

10. The light emitting device of claim 1, wherein the first electrode includes a plurality of openings spaced apart from each other.

11. The light emitting device of claim 9, wherein the first electrode includes a second opening, and

wherein a portion of the upper surface of the first conductive type semiconductor layer is under the second opening of the first electrode.

12. The light emitting device of claim 1, wherein the first portion of the first electrode includes a plurality of line parts having an opening, and

wherein the plurality of line parts contact a plurality of regions of the upper surface of the first conductive type semiconductor layer.

13. The light emitting device of claim 1, wherein the third portion of the first electrode is connected to the first portion and the second portion,

wherein the third portion of the first electrode is disposed on a first side surface and a second side surface of the light emitting structure, and

wherein the first side surface is opposite to the second side surface of the light emitting structure.

14. The light emitting device of claim 1, wherein the first portion of the first electrode has a polygonal shape in a plan view.

15. The light emitting device of claim 1, wherein the insulating layer includes a first portion on side surfaces of the light emitting structure and a second portion having an opening on an the upper surface of the first conductive type semiconductor layer, and

wherein the first portion of the first electrode is in the opening of the second portion of the insulating layer.

16. The light emitting device of claim 1, wherein the second portion of the first electrode is located at a lower position than that of the first position of the first electrode.

17. The light emitting device of claim 1, wherein the first portion of the first electrode comprises at least one finger part on the upper surface of the first conductive type semiconductor layer.

18. The light emitting device of claim 1, wherein a first end of the third portion of the first electrode is connected with the first portion of the first electrode and a second end of the third portion of the first electrode is connected with the second portion of the first electrode,

wherein the third portion includes a plurality of line parts, and

wherein the insulation layer is opened from the plurality of line parts on the side surfaces of the light emitting structure.

19. The light emitting device of claim 1, wherein the first portion of the first electrode is disposed on an entire region of the upper surface of the first conductive semiconductor layer and includes a light-transparent material.

20. The light emitting device of claim 1, wherein the first portion of the first electrode comprises a plurality of contact regions in contact with the upper surface of the first conductive type semiconductor layer.