Methods for forming electrically precise capacitors on insulative substrates, and structures formed therefrom

• US 9,552,924 B2
• Filed: 02/03/2015
• Issued: 01/24/2017
• Est. Priority Date: 10/10/2007
• Status: Active Grant

• Current Assignee: Ensurge Micropower ASA
• Original Assignee: Thin Film Electronics ASA
• Inventors: Kamath, Arvind, Choi, Criswell, Smith, Patrick, Scher, Erik, Li, Jiang
• Primary Examiner(s): TRINH, MINH N
• Application Number:
  US14/613,178
• Publication Number:
  US 20150146345A1
• Time in Patent Office: 721 Days
• US Class Current: 1/1
• CPC Class Codes: H01G 13/00 Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
• CPC Class Codes: H01G 4/002 Details
• CPC Class Codes: H01G 4/005 Electrodes
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/01 Form of self-supporting electrodes
• CPC Class Codes: H01G 4/10 Metal-oxide dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/1209 characterised by the ceramic dielectric material H01G4/1272, H01G4/1281 take precedence
• CPC Class Codes: H01G 4/224 Housing; Encapsulation
• CPC Class Codes: H01G 4/30 Stacked capacitors H01G4/33 takes precedence
• CPC Class Codes: H01G 4/306 made by thin film techniques
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01G 4/40 Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/016 Thin-film circuits
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01Q 1/22 by structural association with other equipment or articles
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: Y10T 29/43 Electric condenser making
• CPC Class Codes: Y10T 29/435 : Solid dielectric type
• CPC Class Codes: Y10T 29/49002 : Electrical device making
• CPC Class Codes: Y10T 29/49016 : Antenna or wave energy "plumbing" making

Abstract

High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.

Claims

1. A method of forming a capacitor, comprising:

a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode;

b. depositing a first insulating layer on said first metal layer by atomic layer deposition (ALD);

c. forming a second capacitor electrode on said first insulating layer;

d. forming a second insulating layer on said first insulating layer and on, adjacent to, or on and adjacent to said second capacitor electrode; and

e. printing a metal precursor ink on said first capacitor electrode and said second insulating layer.

2. The method of claim 1, wherein each of said metal layer and said second capacitor electrode comprises a metal selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, or a combination thereof.

3. The method of claim 1, wherein said first insulating layer has a first thickness of from 20 Å

to 200 Å

.

4. The method of claim 1, wherein each of said first and second insulating layers independently comprises SiO₂, Si₃N₄, a silicon oxynitride, Al₂O₃, SiOC, SiOCH, or HfO₂.

5. The method of claim 1, wherein forming said first capacitor electrode comprises printing a metal precursor in a pattern corresponding to said first capacitor electrode.

6. The method of claim 1, further comprising forming an antenna electrically connected to said first metal layer and said second capacitor electrode.

7. The method of claim 1, further comprising forming a barrier layer on said insulative substrate.

8. The method of claim 1, wherein forming said second insulating layer comprises depositing said second insulating layer at a second thickness greater than said first thickness.

9. The method of claim 1, wherein forming said second capacitor electrode comprises depositing a second conductive layer on said first and second insulating layers.

10. The method of claim 1, further comprising depositing a third insulating layer on said second capacitor electrode and said first insulating layer, and removing a portion of said first insulating layer to form an opening configured to expose a portion of said first capacitor electrode.

11. A method of forming a capacitor, comprising:

a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode, wherein forming said first capacitor electrode comprises printing a metal precursor in a pattern corresponding to said first capacitor electrode;

b. depositing a first insulating layer on said metal layer by atomic layer deposition (ALD);

c. forming a second capacitor electrode on said first insulating layer; and

d. forming a second insulating layer on said first insulating layer and on and/or adjacent to said second capacitor electrode.

12. The method of claim 11, further comprising depositing a first conductive layer on said first capacitor electrode and said second insulating layer.

13. The method of claim 12, wherein depositing said first conductive layer comprises printing a metal precursor ink.

14. The method of claim 11, further comprising annealing the metal precursor.

15. A method of forming a capacitor, comprising:

a. depositing a first metal layer on an insulative substrate having a barrier layer thereon to form a first capacitor electrode;

b. depositing a first insulating layer on said metal layer by atomic layer deposition (ALD);

c. forming a second capacitor electrode on said first insulating layer; and

d. forming a second insulating layer on said first insulating layer and on and/or adjacent to said second capacitor electrode.

16. The method of claim 15, wherein said barrier layer comprises an organic and/or an inorganic dielectric material.

17. The method of claim 16, wherein said organic dielectric material comprises a polyimide, a polyacrylate, a polyether sulfone, a polyethylene naphthalate, or a polyether ether ketone, and said inorganic dielectric material comprises SiO₂, Si₃N₄, silicon oxynitrides, Al₂O₃, SiO₂.Al₂O₃, TiO₂, HfO₂, or a combination thereof.

18. The method of claim 15, further comprising depositing a first conductive layer on said first capacitor electrode, said second insulating layer and an exposed portion of said second capacitor electrode.

19. A method of forming a capacitor, comprising:

a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode;

b. depositing a first insulating layer at a first thickness on said metal layer by atomic layer deposition (ALD);

c. forming a second capacitor electrode on said first insulating layer; and

d. depositing a second insulating layer at a second thickness on said first insulating layer and on and/or adjacent to said second capacitor electrode, said second thickness is greater than said first thickness.

20. The method of claim 19, further comprising depositing a first conductive layer on said first capacitor electrode, said second insulating layer and an exposed portion of said second capacitor electrode.

21. A method of forming a capacitor, comprising:

a. depositing a first metal layer on an insulative substrate to form a first capacitor electrode;

b. depositing a first insulating layer on said metal layer by atomic layer deposition (ALD);

c. forming a second capacitor electrode on said first insulating layer;

d. forming a second insulating layer on said first insulating layer and on and/or adjacent to said second capacitor electrode; and

e. depositing a third insulating layer on said second capacitor electrode and said first insulating layer, and removing a portion of said first insulating layer to form an opening configured to expose a portion of said first capacitor electrode.

22. The method of claim 21, further comprising depositing a first conductive layer on the exposed portion of said first capacitor electrode, said second insulating layer and an exposed portion of said second capacitor electrode.