Semiconductor devices having work function adjusting films with chamfered top surfaces
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate;
a first interlayer insulating film disposed in a first region of the substrate and including a first trench;
a second interlayer insulating film disposed in a second region of the substrate and including a second trench;
a first gate insulating film formed along sidewalls and a bottom surface of the first trench;
a second gate insulating film formed along sidewalls and a bottom surface of the second trench;
at least one first work function adjusting film disposed in the first trench, and disposed on or above sidewalls and a bottom surface of the first gate insulating film;
each of side portions of the at least one first work function adjusting film having a chamfered top surface, the side portions of the at least one first work function adjusting film being disposed on the sidewalls of the first gate insulating film;
at least one second work function adjusting film disposed in the second trench, and disposed on or above sidewalls and a bottom surface of the second gate insulating film, each of side portions of the at least one second work function adjusting film having a chamfered top surface, the side portions of the at least one second work function adjusting film being disposed on the sidewalls of the second gate insulating film;
a first adhesive film disposed in the first trench, and disposed on sidewalls and a bottom surface of the at least one first work function adjusting film;
a second adhesive film disposed in the second trench, and disposed on sidewalls and a bottom surface of the at least one second work function adjusting film;
a first metal gate pattern disposed on the first adhesive film and filling the first trench; and
a second metal gate pattern disposed on the second adhesive film and filling the second trench,wherein the first adhesive film is further disposed on the chamfered top surface of each of the side portions of the at least one first work function adjusting film, andthe second adhesive film is further disposed on the chamfered top surface of each of the side portions of the at least one second work function adjusting film,wherein each of side portions of the at least one first work function adjusting film includes an outer sidewall and an inner sidewall that end at the respective chamfered top surface of each side portion of the at least one first work function adjusting film,wherein the outer sidewall is closer to the first gate insulating film than the inner sidewall, andwherein an uppermost point of the inner sidewall is below an uppermost point of the outer sidewall.
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Abstract
A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a substrate; a first interlayer insulating film disposed in a first region of the substrate and including a first trench; a second interlayer insulating film disposed in a second region of the substrate and including a second trench; a first gate insulating film formed along sidewalls and a bottom surface of the first trench; a second gate insulating film formed along sidewalls and a bottom surface of the second trench; at least one first work function adjusting film disposed in the first trench, and disposed on or above sidewalls and a bottom surface of the first gate insulating film;
each of side portions of the at least one first work function adjusting film having a chamfered top surface, the side portions of the at least one first work function adjusting film being disposed on the sidewalls of the first gate insulating film;at least one second work function adjusting film disposed in the second trench, and disposed on or above sidewalls and a bottom surface of the second gate insulating film, each of side portions of the at least one second work function adjusting film having a chamfered top surface, the side portions of the at least one second work function adjusting film being disposed on the sidewalls of the second gate insulating film; a first adhesive film disposed in the first trench, and disposed on sidewalls and a bottom surface of the at least one first work function adjusting film; a second adhesive film disposed in the second trench, and disposed on sidewalls and a bottom surface of the at least one second work function adjusting film; a first metal gate pattern disposed on the first adhesive film and filling the first trench; and a second metal gate pattern disposed on the second adhesive film and filling the second trench, wherein the first adhesive film is further disposed on the chamfered top surface of each of the side portions of the at least one first work function adjusting film, and the second adhesive film is further disposed on the chamfered top surface of each of the side portions of the at least one second work function adjusting film, wherein each of side portions of the at least one first work function adjusting film includes an outer sidewall and an inner sidewall that end at the respective chamfered top surface of each side portion of the at least one first work function adjusting film, wherein the outer sidewall is closer to the first gate insulating film than the inner sidewall, and wherein an uppermost point of the inner sidewall is below an uppermost point of the outer sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a substrate; a first interlayer insulating film disposed in a first region of the substrate and including a first trench; a second interlayer insulating film disposed in a second region of the substrate and including a second trench; a first gate insulating film formed along sidewalls and a bottom surface of the first trench; a second gate insulating film formed along sidewalls and a bottom surface of the second trench; at least one first work function adjusting film disposed in the first trench, and disposed on or above sidewalls and a bottom surface of the first gate insulating film, each of side portions of the at least one first work function adjusting film having a chamfered top surface, the side portions of the at least one first work function adjusting film being disposed on the sidewalls of the first gate insulating film; at least one second work function adjusting film disposed in the second trench, and disposed on or above sidewalls and a bottom surface of the second gate insulating film, each of side portions of the at least one second work function adjusting film having a chamfered top surface, the side portions of the at least one second work function adjusting film being disposed on the sidewalls of the second gate insulating film; a first adhesive film disposed in the first trench, and disposed on sidewalls and a bottom surface of the at least one first work function adjusting film; a second adhesive film disposed in the second trench, and disposed on sidewalls and a bottom surface of the at least one second work function adjusting film; a first metal gate pattern disposed on the first adhesive film and filling the first trench; and a second metal gate pattern disposed on the second adhesive film and filling the second trench, wherein each side portion of the at least one first work function adjusting film has a respective straight inner sidewall that ends at the respective chamfered top surface of each side portion of the at least one first work function adjusting film, wherein the chamfered top surface of a first of the side portions of the at least one first work function adjusting film comprises a flat surface that is inclined at an acute angle with respect to a sidewall of the first trench. - View Dependent Claims (13, 14)
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15. A semiconductor device comprising:
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a substrate including a fin; a gate electrode formed on the fin; and a source/drain disposed at two sides of the gate electrode, wherein the gate electrode includes; a first interlayer insulating film disposed in a first region of the substrate and including a first trench; a second interlayer insulating film disposed in a second region of the substrate and including a second trench; a first gate insulating film formed along sidewalls and a bottom surface of the first trench; a second gate insulating film formed along sidewalls and a bottom surface of the second trench; at least one first work function adjusting film disposed in the first trench, and disposed on or above sidewalls and a bottom surface of the first gate insulating film, each of side portions of the at least one first work function adjusting film having a chamfered top surface, the side portions of the at least one first work function adjusting film being disposed on the sidewalls of the first gate insulating film; at least one second work function adjusting film disposed in the second trench, and disposed on or above sidewalls and a bottom surface of the second gate insulating film, each of side portions of the at least one second work function adjusting film having a chamfered top surface, the side portions of the at least one second work function adjusting film being disposed on the sidewalls of the second gate insulating film; a first adhesive film disposed in the first trench, and disposed on sidewalls and a bottom surface of the at least one first work function adjusting film; and a second adhesive film disposed in the second trench, and disposed on sidewalls and a bottom surface of the at least one second work function adjusting film, wherein a shortest distance between the fin and the first adhesive film is less than a shortest distance between the fin and the second adhesive film, wherein the chamfered top surface of a first of the side portions of the at least one first work function adjusting film comprises a surface that is inclined at an acute angle with respect to a sidewall of the first trench. - View Dependent Claims (16, 17, 18)
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Specification