Imaging device and electronic apparatus

• US 9,659,994 B2
• Filed: 05/06/2016
• Issued: 05/23/2017
• Est. Priority Date: 01/21/2014
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Inventors: Imoto, Tsutomu, Mabuchi, Keiji
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): SKYLES, TIFNEY L
• Application Number:
  US15/148,127
• Publication Number:
  US 20160247842A1
• Time in Patent Office: 382 Days
• Field of Search: 257230
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14654 Blooming suppression
• CPC Class Codes: H01L 27/14656 Overflow drain structures
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14812 Special geometry or disposition of pixel-elements, address lines or gate-electrodes
• CPC Class Codes: H01L 27/14887 Blooming suppression

Abstract

An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

Claims

1. An imaging device comprising:

a plurality of photoelectric conversion regions that each generate photovoltaic power for a corresponding pixel of the imaging device depending on irradiation light; and

a first element isolation region that is provided between adjacent first and second photoelectric conversion regions included in the plurality of photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, and wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions.

2. The imaging device according to claim 1, further comprising:

a second element isolation region that is provided between at least one of the photoelectric conversion regions and a pixel circuit region.

3. The imaging device according to claim 2, wherein the first and second element isolation regions are configured of a material that blocks a diffusion current.

4. The imaging device according to claim 2, wherein a PN junction diode is formed in at least some of the photoelectric conversion regions as a photo-sensor.

5. The imaging device according to claim 4, wherein a transfer gate and a floating diffusion are further formed in at least some of the photoelectric conversion regions.

6. An imaging device comprising:

a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light, wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor, and wherein a transfer gate and a floating diffusion are further formed in the photoelectric conversion region;

a first element isolation region that is provided between adjacent first and second photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions; and

a second element isolation region that is provided between the photoelectric conversion region and a pixel circuit region.

7. An electronic apparatus equipped with an imaging device, wherein the imaging device includes:

a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light, wherein a PN junction diode is formed in the photoelectric conversion region as a photo-sensor, and wherein a transfer gate and a floating diffusion are further formed in the photoelectric conversion region;

a first element isolation region that is provided between adjacent first and second photoelectric conversion regions, wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion-regions, wherein a photovoltaic type pixel and an accumulation type pixel are formed in the adjacent photoelectric conversion regions; and

a second element isolation region that is provided between the photoelectric conversion region and a pixel circuit region.

8. The electronic apparatus equipped with an imaging device of claim 7, wherein the first and second element isolation regions are configured of a material that blocks a diffusion current.