Light-emitting device and manufacturing method thereof
First Claim
Patent Images
1. A semiconductor device comprising:
- a flexible substrate;
a driving circuit portion over the flexible substrate, comprising;
a first transistor comprising;
a first gate over the flexible substrate;
an insulating layer over the first gate;
a first oxide semiconductor layer over the insulating layer;
a first source over the first oxide semiconductor layer;
a first drain over the first oxide semiconductor layer;
an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, a part of the oxide insulating layer being in contact with a part of the first oxide semiconductor layer between the first source and the first drain; and
a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and a channel region of the first transistor, wherein the channel region is between the first source and the first drain;
a pixel portion over the flexible substrate, comprising;
a second transistor comprising;
a second gate over the flexible substrate;
the insulating layer over the second gate;
a second oxide semiconductor layer over the insulating layer;
a second source over the second oxide semiconductor layer;
a second drain over the second oxide semiconductor layer; and
the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, a part of the oxide insulating layer being in contact with a part of the second oxide semiconductor layer between the second source and the second drain;
a color filter over the oxide insulating layer;
a first electrode layer over the color filter and electrically connected to the second transistor;
an EL layer over the first electrode layer; and
a second electrode layer over the EL layer; and
a terminal portion comprising;
a third electrode layer over the flexible substrate;
the insulating layer over the third electrode layer, the insulating layer including a first contact hole;
a fourth electrode layer over and in contact with the third electrode layer through the first contact hole;
the oxide insulating layer over the fourth electrode layer, the oxide insulating layer including a second contact hole; and
a fifth electrode layer over and in contact with the fourth electrode layer through the second contact hole,wherein the third electrode layer is formed from a same layer as the first gate,wherein the fourth electrode layer is formed from a same layer as the first source and the first drain,wherein the fifth electrode layer is formed from a same layer as the conductive layer, andwherein the driving circuit portion is located outside the pixel portion.
0 Assignments
0 Petitions
Accused Products
Abstract
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
-
Citations
7 Claims
-
1. A semiconductor device comprising:
-
a flexible substrate; a driving circuit portion over the flexible substrate, comprising; a first transistor comprising; a first gate over the flexible substrate; an insulating layer over the first gate; a first oxide semiconductor layer over the insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, a part of the oxide insulating layer being in contact with a part of the first oxide semiconductor layer between the first source and the first drain; and a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and a channel region of the first transistor, wherein the channel region is between the first source and the first drain; a pixel portion over the flexible substrate, comprising; a second transistor comprising; a second gate over the flexible substrate; the insulating layer over the second gate; a second oxide semiconductor layer over the insulating layer; a second source over the second oxide semiconductor layer; a second drain over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, a part of the oxide insulating layer being in contact with a part of the second oxide semiconductor layer between the second source and the second drain; a color filter over the oxide insulating layer; a first electrode layer over the color filter and electrically connected to the second transistor; an EL layer over the first electrode layer; and a second electrode layer over the EL layer; and a terminal portion comprising; a third electrode layer over the flexible substrate; the insulating layer over the third electrode layer, the insulating layer including a first contact hole; a fourth electrode layer over and in contact with the third electrode layer through the first contact hole; the oxide insulating layer over the fourth electrode layer, the oxide insulating layer including a second contact hole; and a fifth electrode layer over and in contact with the fourth electrode layer through the second contact hole, wherein the third electrode layer is formed from a same layer as the first gate, wherein the fourth electrode layer is formed from a same layer as the first source and the first drain, wherein the fifth electrode layer is formed from a same layer as the conductive layer, and wherein the driving circuit portion is located outside the pixel portion. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A semiconductor device comprising:
-
a flexible substrate; a driving circuit portion over the flexible substrate, comprising; a first transistor comprising; a first gate over the flexible substrate; an insulating layer over the first gate; a first oxide semiconductor layer over the insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, a part of the oxide insulating layer being in contact with a part of the first oxide semiconductor layer between the first source and the first drain; and a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and a channel region of the first transistor, wherein the channel region is between the first source and the first drain; a pixel portion over the flexible substrate, comprising; a color filter over the oxide insulating layer; a first electrode layer over the color filter; an EL layer over the first electrode layer; and a second electrode layer over the EL layer; and a terminal portion comprising; a third electrode layer over the flexible substrate; the insulating layer over the third electrode layer, the insulating layer including a first contact hole; a fourth electrode layer over and in contact with the third electrode layer through the first contact hole; the oxide insulating layer over the fourth electrode layer, the oxide insulating layer including a second contact hole; and a fifth electrode layer over and in contact with the fourth electrode layer through the second contact hole, wherein the third electrode layer is formed from a same layer as the first gate, wherein the fourth electrode layer is formed from a same layer as the first source and the first drain, and wherein the fifth electrode layer is formed from a same layer as the conductive layer.
-
Specification