Iterative self-aligned patterning
First Claim
1. A method for self-aligned patterning, the method comprising:
- providing a substrate;
forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate;
depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material;
anisotropically etching the first spacer layer with a first etchant to leave a first set of spacers on sidewalls of the mandrel features;
removing the mandrel layer;
depositing a second spacer layer over remaining portions of the first set of spacers; and
anisotropically etching the second spacer layer with a second etchant to form a second set of spacers on sidewalls of the first set of spacers, the second etchant being different than the first etchant, removing the first set of spacers of the first spacer layer.
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Abstract
A method for self-aligned patterning includes providing a substrate, forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate, depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material, anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features, removing the mandrel layer, depositing a second spacer layer over remaining portions of the first set of spacers, and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers.
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Citations
19 Claims
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1. A method for self-aligned patterning, the method comprising:
- providing a substrate;
forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate;
depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material;
anisotropically etching the first spacer layer with a first etchant to leave a first set of spacers on sidewalls of the mandrel features;
removing the mandrel layer;
depositing a second spacer layer over remaining portions of the first set of spacers; and
anisotropically etching the second spacer layer with a second etchant to form a second set of spacers on sidewalls of the first set of spacers, the second etchant being different than the first etchant, removing the first set of spacers of the first spacer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- providing a substrate;
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10. A method for iterative self-aligned patterning, the method comprising:
- providing a substrate;
forming a patterned mandrel layer on the substrate;
depositing a first spacer layer over the mandrel layer such that the first spacer layer conforms to the mandrel layer, the first spacer layer comprising a first type of material;
performing a first anisotropic etching process to the first spacer layer using a first etchant, thereby leaving a first set of spacers on sidewalls of the mandrel layer;
removing the mandrel layer;
forming a second spacer layer over the first set of spacers such that the second spacer layer conforms to the first set of spacers, the second spacer layer comprising a second type of material different from the first type of material; and
performing a second anisotropic etching process to the second spacer layer using a second etchant different from the first etchant, thereby forming a second set of spacers on sidewalls of the first set of spacers, removing the first set of spacers of the first spacer layer. - View Dependent Claims (11, 12, 13, 14, 15, 16)
- providing a substrate;
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17. A method for iterative self-aligned patterning, the method comprising:
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providing a substrate; forming a patterned mandrel layer on the substrate; forming a first set of spacers on sidewalls of the mandrel layer, the first set of spacers comprising a first type of material; removing the mandrel layer; forming a second set of spacers on sidewalls of the first set of spacers, the second set of spacers comprising a second type of material; removing the first set of spacers; forming a third set of spacers on sidewalls of the second set of spacers, the third set of spacers comprising the first type of material; and removing the second set of spacers. - View Dependent Claims (18, 19)
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Specification