Method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device
First Claim
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1. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
- providing a semiconductor material having a major surface and a resistivity of at least 5 ohm-centimeters, the semiconductor material including a first epitaxial layer of a first conductivity type over the semiconductor substrate and a second epitaxial layer of a second conductivity type over the first epitaxial layer and buried layer of the first conductivity type formed from portions of the first and second epitaxial layers;
forming a plurality of trenches in the semiconductor material, wherein forming the plurality of trenches includes forming at least first, second, third, and fourth trenches, wherein a portion of the semiconductor material between the first and second trenches serves as a first device region, a portion of the semiconductor material between the second and third trenches serves as a second device region, and a portion of the semiconductor material between the third and fourth trenches serves as a third device region;
forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches; and
monolithically integrating the common mode filter with the protection device.
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Abstract
In accordance with an embodiment, a semiconductor component, includes a common mode filter monolithically integrated with a protection device. The common mode filter includes a plurality of coils and the protection device has a terminal coupled to a first coil and another terminal coupled to a second coil.
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Citations
17 Claims
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1. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
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providing a semiconductor material having a major surface and a resistivity of at least 5 ohm-centimeters, the semiconductor material including a first epitaxial layer of a first conductivity type over the semiconductor substrate and a second epitaxial layer of a second conductivity type over the first epitaxial layer and buried layer of the first conductivity type formed from portions of the first and second epitaxial layers; forming a plurality of trenches in the semiconductor material, wherein forming the plurality of trenches includes forming at least first, second, third, and fourth trenches, wherein a portion of the semiconductor material between the first and second trenches serves as a first device region, a portion of the semiconductor material between the second and third trenches serves as a second device region, and a portion of the semiconductor material between the third and fourth trenches serves as a third device region; forming the protection device from the semiconductor material between first and second trenches of the plurality of trenches; and monolithically integrating the common mode filter with the protection device. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
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providing a semiconductor material having a major surface and a resistivity of at least 5 ohm-centimeters; forming a first trench in the semiconductor material, wherein the first trench extends from the major surface into a first portion of the semiconductor material and separates a second portion of the semiconductor material from a third portion of the semiconductor material; forming a first semiconductor device from the second portion of the semiconductor material; forming a second semiconductor device from the third portion of the semiconductor material, the sir semiconductor device electrically coupled to the second semiconductor device; forming a first layer of dielectric material over the major surface; and forming a first opening in the first layer of dielectric material; and forming a common mode filter over the semiconductor material, the common mode filter monolithically integrated with the first semiconductor device and having a first coil contact structure electrically contacting the first semiconductor device. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor component having a common mode filter monolithically integrated with a protection device, comprising:
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providing a semiconductor material of a first conductivity type and having a major surface and a resistivity of at least 5 ohm-centimeters; forming a first trench in the semiconductor material, wherein the first trench extends from the major surface into a first portion of the semiconductor material and separates a second portion of the semiconductor material from a third portion of the semiconductor material; forming a second trench in the semiconductor material, wherein the second trench extends from the major surface into a fourth portion of the semiconductor material and separates the third portion of the semiconductor material from a fifth portion of the semiconductor material; forming a third trench in the semiconductor material, wherein the third trench extends from the major surface into a sixth portion of the semiconductor material and separates the fifth portion of the semiconductor material from a seventh portion of the semiconductor material; forming a first semiconductor device from the second portion of the semiconductor material; forming a second semiconductor device from the third portion of the semiconductor material, the second semiconductor device electrically coupled to the first semiconductor device; forming a third semiconductor device from the fifth portion of the semiconductor material, the third semiconductor device electrically coupled to the second semiconductor device; forming a first layer of dielectric material over the major surface; and forming a first opening in the first layer of dielectric material and a second opening in the first layer of dielectric material; and forming a common mode filter over the semiconductor material, the common mode filter monolithically integrated with the first semiconductor device, the second semiconductor device, and the third semiconductor device and having a first coil contact structure electrically contacting the first semiconductor device and a second coil contact structure electrically contacting the second semiconductor device. - View Dependent Claims (16, 17)
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Specification