Light emitting device having light extraction structure and method for manufacturing the same
First Claim
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1. A light emitting device, comprising:
- a support layer;
a reflective electrode disposed on the support layer;
an ohmic electrode disposed on the reflective electrode, the ohmic electrode comprising a transparent electrode;
a semiconductor structure disposed on the ohmic electrode, the semiconductor structure comprising;
a p-type semiconductor layer disposed on the ohmic electrode;
a light emitting layer disposed on the p-type semiconductor layer; and
an n-type semiconductor layer disposed on the light emitting layer; and
a light extraction structure disposed in the n-type semiconductor layer,wherein the transparent electrode has a thickness in the range of 40 nm to 90 nm,wherein a distance between the reflective electrode and a center of the light emitting layer falls within the range represented by 0.65λ
/n to 0.85λ
/n, where “
λ
”
represents a wavelength of light emitted from the light emitting layer and “
n”
represents a refractive index of the semiconductor structure, andwherein the light extraction structure has an average periodicity of 0.8 μ
m to 5 μ
m.
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Abstract
A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
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Citations
17 Claims
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1. A light emitting device, comprising:
-
a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode comprising a transparent electrode; a semiconductor structure disposed on the ohmic electrode, the semiconductor structure comprising; a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer; and a light extraction structure disposed in the n-type semiconductor layer, wherein the transparent electrode has a thickness in the range of 40 nm to 90 nm, wherein a distance between the reflective electrode and a center of the light emitting layer falls within the range represented by 0.65λ
/n to 0.85λ
/n, where “
λ
”
represents a wavelength of light emitted from the light emitting layer and “
n”
represents a refractive index of the semiconductor structure, andwherein the light extraction structure has an average periodicity of 0.8 μ
m to 5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification