Semiconductor devices and methods of manufacturing the same
First Claim
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1. A semiconductor device, comprising:
- a substrate comprising a plurality of first active regions and a plurality of second active regions;
a plurality of first spacers, respective first spacers of the plurality of first spacers respectively being on both sidewalls of the plurality of first active regions;
a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and
a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively,wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers.
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Abstract
A semiconductor device includes: a substrate including a plurality of first active regions and a plurality of second active regions; a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively, wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate comprising a plurality of first active regions and a plurality of second active regions; a plurality of first spacers, respective first spacers of the plurality of first spacers respectively being on both sidewalls of the plurality of first active regions; a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively, wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers. - View Dependent Claims (2, 3, 4, 5, 16, 17, 18, 20)
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6. A semiconductor device, comprising:
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a substrate including a field region and first and second active regions, an isolation layer being formed on the field region, and the first and second active regions protruding from the isolation layer; first and second gate structures on the first and second active regions, respectively; first and second spacers on sidewalls of the first and second active regions, respectively, top surfaces of the first and second spacers being formed to be higher than those of the first and second active regions, respectively, and heights of the top surfaces of the first and second spacers being different from each other; and first and second source/drain layers adjacent to the first and second gate structures on the first and second active regions, respectively, the first and second source/drain layers contacting the first and second spacers, respectively. - View Dependent Claims (7, 8, 9, 10, 11, 14, 15, 19)
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12. A semiconductor device, comprising:
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a substrate including a field region and first and second active regions, an isolation layer being formed on the field region, and the first and second active regions protruding from the isolation layer; first and second gate structures on the first and second active regions, respectively; first and second spacers on sidewalls of the first and second active regions, respectively, top surfaces of the first and second spacers being formed to be higher than those of the first and second active regions, respectively, and heights of the top surfaces of the first and second spacers being different from each other; and first and second source/drain layers adjacent to the first and second gate structures on the first and second active regions, respectively, the first and second source/drain layers contacting the first and second spacers, respectively, wherein the first active region includes a plurality of first active regions, each of which extends in a second direction substantially parallel to a top surface of the substrate, disposed at a first gap from each other in a first direction substantially parallel to the top surface of the substrate and substantially perpendicular to the second direction, and wherein the second active region includes a plurality of second active regions, each of which extends in the second direction, disposed at a second gap from each other in the first direction, the second gap being greater than the first gap. - View Dependent Claims (13)
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Specification