Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods
First Claim
1. A power amplifier module comprising:
- a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a p-type field effect transistor, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and
a radio frequency transmission line electrically coupled to an output of the power amplifier, the radio frequency transmission line including a nickel layer with a thickness that is less than 0.5 microns, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer.
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Accused Products
Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.
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Citations
20 Claims
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1. A power amplifier module comprising:
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a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a p-type field effect transistor, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier, the radio frequency transmission line including a nickel layer with a thickness that is less than 0.5 microns, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A power amplifier module comprising:
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a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a substrate and a p-type field effect transistor on the substrate, the heterojunction bipolar transistor including a first collector layer of a p-type semiconductor material and a second collector layer of n-type semiconductor material, and the p-type field effect transistor including a semiconductor portion of the p-type semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier, the radio frequency transmission line including a nickel layer with a thickness that is less than a skin depth of the nickel layer at 0.45 GHz, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. - View Dependent Claims (14, 15, 16, 17)
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18. A power amplifier module comprising:
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a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a substrate and a p-type field effect transistor on the substrate, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor; and a radio frequency transmission line electrically coupled to an output of the power amplifier by way of a wire bond, the radio frequency transmission line including a nickel layer with a thickness that is in a range between about 0.04 microns and 0.35 microns, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer and in contact with the wire bond. - View Dependent Claims (19, 20)
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Specification