Non-polar (Al,B,In,Ga)N quantum wells
First Claim
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1. A semiconductor device structure, comprising:
- (a) an initial non-polar (Al, B, In, Ga)N layer in the structure, wherein the initial non-polar (Al, B, In, Ga)N layer comprises a first non-polar (Al, B, In, Ga)N layer grown on or above a substrate, the initial non-polar (Al, B, In, Ga)N layer has a growth surface for subsequent layers that is a grown surface, and the grown surface is a non-polar plane; and
(b) one or more subsequent non-polar (Al, B, In, Ga)N layers grown directly on or above the growth surface of the initial non-polar (Al, B, In, Ga)N layer;
(c) wherein the non-polar (Al, B, In, Ga)N layers form at least one non-polar (Al, B, In, Ga)N quantum well and the non-polar (Al, B, In, Ga)N quantum well has a width of 5 nm or more for generating light at a maximum emission intensity.
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Abstract
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
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Citations
18 Claims
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1. A semiconductor device structure, comprising:
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(a) an initial non-polar (Al, B, In, Ga)N layer in the structure, wherein the initial non-polar (Al, B, In, Ga)N layer comprises a first non-polar (Al, B, In, Ga)N layer grown on or above a substrate, the initial non-polar (Al, B, In, Ga)N layer has a growth surface for subsequent layers that is a grown surface, and the grown surface is a non-polar plane; and (b) one or more subsequent non-polar (Al, B, In, Ga)N layers grown directly on or above the growth surface of the initial non-polar (Al, B, In, Ga)N layer; (c) wherein the non-polar (Al, B, In, Ga)N layers form at least one non-polar (Al, B, In, Ga)N quantum well and the non-polar (Al, B, In, Ga)N quantum well has a width of 5 nm or more for generating light at a maximum emission intensity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating a semiconductor device structure, comprising:
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(a) growing an initial non-polar (Al, B, In, Ga)N layer in the structure, wherein the initial non-polar (Al, B, In, Ga)N layer comprises a first non-polar (Al, B, In, Ga)N layer grown on or above a substrate, the initial non-polar (Al, B, In, Ga)N layer has a growth surface for subsequent layers that is a grown surface, and the grown surface is a non-polar plane; and (b) growing one or more subsequent non-polar (Al, B, In, Ga)N layers directly on or above the growth surface of the initial non-polar (Al, B, In, Ga)N layer; (c) wherein the non-polar (Al, B, In, Ga)N layers form at least one non-polar (Al, B, In, Ga)N quantum well and the non-polar (Al, B, In, Ga)N quantum well has a width of 5 nm or more for generating light at a maximum emission intensity. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification