Method of semiconductor integrated circuit fabrication
First Claim
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1. A method comprising:
- forming a conductive layer on a substrate;
forming a catalyst layer on the conductive layer;
forming a plurality of carbon nanotubes (CNTSs) from the catalyst layer;
patterning the conductive layer by using the plurality of CNTs as a mask to form conductive features; and
forming a dielectric layer directly on the plurality of CNTs.
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Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate and depositing a conductive layer on the substrate. A patterned hard mask and a catalyst layer are formed on the conductive layer. The method further includes growing a plurality of carbon nanotubes (CNTs) from the catalyst layer and etching the conductive layer by using the CNTs and the patterned hard mask as an etching mask to form metal features.
30 Citations
20 Claims
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1. A method comprising:
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forming a conductive layer on a substrate; forming a catalyst layer on the conductive layer; forming a plurality of carbon nanotubes (CNTSs) from the catalyst layer; patterning the conductive layer by using the plurality of CNTs as a mask to form conductive features; and forming a dielectric layer directly on the plurality of CNTs. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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forming a conductive layer on a substrate; forming a patterned material layer on the conductive layer, the patterned material layer defining an opening that exposes a portion of the conductive layer; forming a catalyst layer on the exposed portion of the conductive layer; removing the patterned material layer; forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and patterning the conductive layer by using the plurality of CNTs as a mask to form conductive features. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method comprising:
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forming a metal layer on a substrate; forming a patterned first material layer on the metal layer, the patterned first material layer defining an opening that exposes a portion of the metal layer; forming a patterned second material layer on the patterned first material layer and within the opening; forming a catalyst layer on the exposed portion of the metal layer; removing the patterned second material layer; forming a plurality of carbon nanotubes (CNTs) from the catalyst layer; and etching the metal layer by using the plurality of CNTs as a mask. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification