Formation and structure of post enhanced diodes for orientation control
First Claim
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1. A method for manufacturing a post enhanced diode, the method comprising:
- providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; and
forming a post disposed over the diode stack structure, wherein forming the post disposed over the diode stack structure includes;
forming a post material disposed over the diode stack structure, wherein a thickness of the post material defines a height of the post;
forming a hard mask disposed over the post material to define a width of the post, wherein forming the hard mask includes;
depositing an etch stop layer overlying the post material;
depositing a hard mask layer over the etch stop layer;
depositing a masking layer overlying the hard mask layer;
patterning the masking layer to define a post shape and exposing regions of the hard mask;
etching the hard mask layer to expose regions of the etch stop; and
etching the etch stop to expose regions of the post material; and
etching the post material using the hard mask as a guide to define the post.
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Abstract
Embodiments are related to systems and methods for fluidic assembly, and more particularly to diodes offering orientation control properties in a fluidic assembly system.
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Citations
36 Claims
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1. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; and forming a post disposed over the diode stack structure, wherein forming the post disposed over the diode stack structure includes; forming a post material disposed over the diode stack structure, wherein a thickness of the post material defines a height of the post; forming a hard mask disposed over the post material to define a width of the post, wherein forming the hard mask includes; depositing an etch stop layer overlying the post material; depositing a hard mask layer over the etch stop layer; depositing a masking layer overlying the hard mask layer; patterning the masking layer to define a post shape and exposing regions of the hard mask; etching the hard mask layer to expose regions of the etch stop; and etching the etch stop to expose regions of the post material; and etching the post material using the hard mask as a guide to define the post. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer; patterning and etching the diode stack structure to yield a diode structure; forming a post disposed over the diode structure, wherein the post is formed subsequent to patterning and etching the diode stack structure, wherein a height of the diode stack is less than 3.5 times a height of the post; and wherein forming the post disposed over the diode stack structure includes; forming a post material disposed over the diode stack structure, wherein a thickness of the post material defines a height of the post; forming a hard mask disposed over the post material to define a width of the post, wherein forming the hard mask includes; depositing an etch stop layer overlying the post material; depositing a hard mask layer over the etch stop layer; depositing a masking layer overlying the hard mask layer; patterning the masking layer to define a post shape and exposing regions of the hard mask; etching the hard mask layer to expose regions of the etch stop; and etching the etch stop to expose regions of the post material; and etching the post material using the hard mask as a guide to define the post. - View Dependent Claims (20, 21, 22, 23)
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24. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer, wherein the diode stack structure is formed over a substrate; patterning and etching the diode stack structure to yield a diode structure forming a post disposed over the diode structure, wherein the post is formed before patterning and etching the diode stack structure;
wherein forming the post disposed over the diode structure includes;forming a post material disposed over the diode stack structure, wherein a thickness of the post material defines a height of the post; forming a hard mask disposed over the post material to define a width of the post, wherein forming the hard mask includes; depositing an etch stop layer overlying the post material; depositing a hard mask layer over the etch stop layer; depositing a masking layer overlying the hard mask layer; patterning the masking layer to define a post shape and exposing regions of the hard mask; etching the hard mask layer to expose regions of the etch stop; and etching the etch stop to expose regions of the post material; and etching the post material using the hard mask as a guide to define the post; and subsequent to forming the post, separating the post enhanced diode from the substrate. - View Dependent Claims (25, 26)
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27. A method for manufacturing a post enhanced diode, the method comprising:
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providing a diode stack structure including an n-doped semiconductor layer and a p-doped semiconductor layer, wherein the diode stack structure is formed over a substrate; forming a post disposed over the diode stack structure, wherein forming the post disposed over the diode stack structure includes; forming a post material disposed over the diode stack structure, wherein a thickness of the post material defines a height of the post; forming a hard mask disposed over the post material to define a width of the post, wherein forming the hard mask includes; depositing an etch stop layer overlying the post material; depositing a hard mask layer over the etch stop layer; depositing a masking layer overlying the hard mask layer; patterning the masking layer to define a post shape and exposing regions of the hard mask; etching the hard mask layer to expose regions of the etch stop; and etching the etch stop to expose regions of the post material; and etching the post material using the hard mask as a guide to define the post; and subsequent to forming the post, separating the post enhanced diode from at least a portion of the substrate. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification