Thin film transistor, manufacturing method thereof, display substrate and display device

  • US 10,204,924 B2
  • Filed: 11/04/2016
  • Issued: 02/12/2019
  • Est. Priority Date: 01/12/2016
  • Status: Active Grant
First Claim
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1. A thin film transistor (TFT), comprising:

  • a gate electrode;

    a gate insulating layer disposed on the gate electrode;

    an active layer having a double-layered structure comprising a first active layer disposed directly on the gate insulating layer and a second active layer disposed directly on the first active layer, the second active layer having a length smaller than that of the first active layer, the first active layer comprising a top surface and a bottom surface, the top surface and the bottom surface being parallel to each other, and a first portion of of the top surface being directly in contact with the second active layer;

    a source electrode disposed on the first active layer, being partly directly in contact with a second portion of the top surface of the first active layer and partly in contact with a first side surface of the second active layer; and

    a drain electrode disposed on the first active layer, being partly directly in contact with a third portion of the top surface of the first active layer and partly in contact with a second side surface of the second active layer, whereina resistivity of the first active layer is smaller than that of the second active layer, andthe first portion, the second portion, and the third portion of the top surface of the first active layer are continuously and integrally formed to have an equal height everywhere along the top surface.

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