Thin Film Transistor, Manufacturing Method Thereof, Display Substrate and Display Device
First Claim
1. A thin film transistor (TFT), comprising:
- a gate electrode;
a gate insulating layer disposed on the gate electrode;
a first active layer disposed on the gate insulating layer;
a second active layer disposed on the first active layer, having a length smaller than that of the first active layer;
a source electrode disposed on the first active layer, being contacted with a first side of the second active layer; and
a drain electrode disposed on the first active layer, being contacted with a second side of the second active layer.
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Abstract
A thin film transistor (TFT), a manufacturing method thereof, a display substrate and a display device are disclosed. The TFT includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first active layer disposed on the gate insulating layer; a second active layer disposed on the first active layer, having a length smaller than that of the second active layer; a source electrode disposed on the first active layer, being contacted with a first side of the second active layer; and a drain electrode disposed on the first active layer, being contacted with a second side of the second active layer. Embodiments of the present invention can increase an ON-state current and meanwhile reduce an OFF leakage current in the TFT.
15 Citations
13 Claims
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1. A thin film transistor (TFT), comprising:
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a gate electrode; a gate insulating layer disposed on the gate electrode; a first active layer disposed on the gate insulating layer; a second active layer disposed on the first active layer, having a length smaller than that of the first active layer; a source electrode disposed on the first active layer, being contacted with a first side of the second active layer; and a drain electrode disposed on the first active layer, being contacted with a second side of the second active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 13)
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9. A manufacturing method of TFT, comprising:
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forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a first active layer on the gate insulating layer; forming a second active layer on the first active layer, the second active layer having a length smaller than that of the first active layer; and forming a source electrode and a drain electrode on the first active layer, the source electrode and the drain electrode being contacted with two sides of the second active layer, respectively. - View Dependent Claims (10, 11, 12)
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Specification