Device structure having inter-digitated back to back MOSFETs
First Claim
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1. A bi-directional switch device, comprising:
- a semiconducting substrate;
two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on the substrate, with their drains connected together, but otherwise isolated from each other, wherein each of the two inter-digitated back-to-back vertical MOSFETs has a number of active cells with one or more active gate trenches, wherein a pitch of a plurality of segments corresponding to two inter-digitated back-to-back vertical MOSFETs is selected such that a source-to-source current path between the two inter-digitated back-to-back MOSFETs is predominantly lateral current flow in a drift region of the two MOSFETs; and
a termination structure formed between the two MOSFETs having one or more trenches, each in a size different from that of each of one or more active gate trenches in the active cells in the two MOSFETs.
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Abstract
A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on a substrate with their drains connected together, but otherwise isolated from each other.
382 Citations
20 Claims
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1. A bi-directional switch device, comprising:
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a semiconducting substrate; two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (MOSFETs) formed on the substrate, with their drains connected together, but otherwise isolated from each other, wherein each of the two inter-digitated back-to-back vertical MOSFETs has a number of active cells with one or more active gate trenches, wherein a pitch of a plurality of segments corresponding to two inter-digitated back-to-back vertical MOSFETs is selected such that a source-to-source current path between the two inter-digitated back-to-back MOSFETs is predominantly lateral current flow in a drift region of the two MOSFETs; and a termination structure formed between the two MOSFETs having one or more trenches, each in a size different from that of each of one or more active gate trenches in the active cells in the two MOSFETs. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A bi-directional switch device, comprising:
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a semiconducting substrate; a first vertical metal oxide semiconductor field effect transistor (MOSFET) formed on the substrate, the first vertical metal oxide semiconductor field effect transistor having a first source region, a first gate region disposed on a first top portion of the substrate and a first drain disposed on a first bottom portion of the substrate, a first source metal electrically connected to the first source region; a second vertical MOSFET formed on the substrate, the second vertical metal oxide semiconductor field effect transistor comprises a second source region, a second gate region disposed on a second top portion of the substrate and a second drain disposed on a second bottom portion of the substrate, a second source metal electrically connected to the second source region, wherein each of the first and second vertical MOSFETs has a number of active cells with one or more active gate trenches; and an isolation structure comprising at least a trench between the first and second MOSFETs, wherein each of the at least a trench is in a size different from that of each of one or more active gate trenches in the active cells in the first and second MOSFETs, wherein the first and second drains are electrically connected together, the first source and the first gate are electrically isolated from the second source and the second gate respectively thus forming two back-to-back MOSFETs, wherein a source-to-source current path between the two back-to-back MOSFETs is predominantly lateral current flow in a drift region of the two MOSFETs. - View Dependent Claims (20)
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Specification