MEMS package with roughend interface
First Claim
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1. A method, comprising:
- providing a first substrate on which a plurality of first semiconductor devices is formed;
providing a second substrate on which a plurality of second semiconductor devices is formed;
roughening a top surface of a first dummy pad extending outwardly from the first substrate, wherein the first dummy pad is formed as a ring-shape configuration that surrounds the plurality of first semiconductor devices;
roughening a top surface of a second dummy pad extending outwardly from the second substrate, wherein the second dummy pad is formed as a ring-shape configuration that surrounds the plurality of second semiconductor devices;
providing a first bonding pad extending outwardly from the first substrate, the first bonding pad being surrounded by the first dummy pad; and
providing a second bonding pad extending outwardly from the second substrate, the second bonding pad being surrounded by the second dummy pad, wherein the first and second bonding pads are located so as to be bonded with each other when the first and second substrates are coupled to one another;
coupling the first and second substrates by contacting the roughened top surfaces of the first and second dummy pads with each other so as to limit a lateral shift between the first and second substrates, wherein each of the top surfaces of the first and second dummy pads of the first and second substrates comprises plural peaks and valleys; and
providing a metal plate around an edge of a top surface of the second substrate so as to prevent lateral shifting between the first and second substrates after they are coupled to one another.
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Abstract
A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.
9 Citations
20 Claims
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1. A method, comprising:
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providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; roughening a top surface of a first dummy pad extending outwardly from the first substrate, wherein the first dummy pad is formed as a ring-shape configuration that surrounds the plurality of first semiconductor devices; roughening a top surface of a second dummy pad extending outwardly from the second substrate, wherein the second dummy pad is formed as a ring-shape configuration that surrounds the plurality of second semiconductor devices; providing a first bonding pad extending outwardly from the first substrate, the first bonding pad being surrounded by the first dummy pad; and providing a second bonding pad extending outwardly from the second substrate, the second bonding pad being surrounded by the second dummy pad, wherein the first and second bonding pads are located so as to be bonded with each other when the first and second substrates are coupled to one another; coupling the first and second substrates by contacting the roughened top surfaces of the first and second dummy pads with each other so as to limit a lateral shift between the first and second substrates, wherein each of the top surfaces of the first and second dummy pads of the first and second substrates comprises plural peaks and valleys; and providing a metal plate around an edge of a top surface of the second substrate so as to prevent lateral shifting between the first and second substrates after they are coupled to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method, comprising:
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providing a first substrate on which a plurality of first semiconductor devices are formed, wherein the plurality of first semiconductor devices are at least partially surrounded by a plurality of first dummy pads arranged in a ring configuration around the plurality of first semiconductor devices; providing a second substrate on which a plurality of second semiconductor devices are formed, wherein the plurality of second semiconductor devices are at least partially surrounded by a plurality of second dummy pads arranged in a ring configuration around the plurality of second semiconductor devices; roughening respective top surfaces of each of the plurality of first dummy pads; roughening respective top surfaces of each of the plurality of second dummy pads; providing a first bonding pad extending outwardly from the first substrate, the first bonding pad being at least partially surrounded by the plurality of first dummy pads; providing a second bonding pad extending outwardly from the second substrate, the second bonding pad being at least partially surrounded by the plurality of second dummy pads, wherein the first and second bonding pads are located so as to be bonded with each other when the first and second substrates are coupled to one another; coupling the first and second substrates by contacting respective top surface of the plurality of first and second dummy pads with each other so as to limit a lateral shift between the first and second substrates, wherein each of the top surfaces of the plurality of first and second dummy pads comprises plural peaks and valleys; and providing a metal plate around an edge of a top surface of the second substrate so as to prevent lateral shifting between the first and second substrates after they are coupled to one another. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method, comprising:
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providing a first substrate on which a first semiconductor device is formed, wherein the first semiconductor device is at least partially surrounded by a plurality of first dummy pads; providing a second substrate on which a second semiconductor device is formed, wherein the second semiconductor device is at least partially surrounded by a plurality of second dummy pads; roughing respective top surfaces of the first dummy pads; roughing respective top surfaces of the second dummy pads; flipping the second substrate and aligning the first semiconductor device with the second semiconductor device; providing a first bonding pad extending outwardly from the first substrate, the first bonding pad being at least partially surrounded by the plurality of first dummy pads; providing a second bonding pad extending outwardly from the second substrate, the second bonding pad being at least partially surrounded by the plurality of second dummy pads, wherein the first and second bonding pads are located so as to be bonded with each other when the first and second substrates are coupled to one another; coupling the first and second substrates by contacting the roughened top surfaces of respective first and second dummy pads with each other so as to limit a lateral shift between the first and second substrates; and providing a metal plate around an edge of a top surface of the second substrate so as to prevent lateral shifting between the first and second substrates after they are coupled to one another. - View Dependent Claims (17, 18, 19, 20)
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Specification