Preparation of high conductivity copper films
First Claim
1. A copper precursor composition comprising:
- a first copper complex comprising an imine or a first cyclic amine coordinated to a first copper precursor compound,the imine comprising a compound of Formula (I)
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Abstract
A copper precursor composition contains: a first copper complex of an imine or a first cyclic amine coordinated to a first copper precursor compound; and, a second copper complex of a primary amine or a second cyclic amine coordinated to a second copper precursor compound. A copper precursor composition contains a copper complex of an imine coordinated to a copper precursor compound. The copper precursor composition is thermally degradable at a temperature lower than a comparable composition containing only primary amine copper complexes under otherwise the same conditions to produce a metallic copper film having a resistivity of about 200 μΩ-cm or less. Inks containing the copper precursor composition and a solvent may be deposited on a substrate and sintered to produce a metallic copper film. The substrate with the film thereon is useful in electronic devices.
16 Citations
23 Claims
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1. A copper precursor composition comprising:
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a first copper complex comprising an imine or a first cyclic amine coordinated to a first copper precursor compound, the imine comprising a compound of Formula (I) - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification