Method for fabricating a semiconductor device comprising an oxide semiconductor

  • US 11,107,840 B2
  • Filed: 02/03/2020
  • Issued: 08/31/2021
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device comprising the steps of:

  • forming a gate electrode layer;

    forming a gate insulating layer;

    forming an oxide semiconductor layer, in which a channel is formed, overlapping with the gate electrode layer with the gate insulating layer provided therebetween;

    forming a first insulating layer over the oxide semiconductor layer;

    forming a second insulating layer over the first insulating layer;

    forming a third insulating layer over the second insulating layer; and

    forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer,wherein the oxide semiconductor layer comprises indium, gallium, and zinc,wherein the oxide semiconductor layer is formed by a sputtering method,wherein the oxide semiconductor layer comprises a crystal region including a crystal with a particle size greater than or equal to 1 nm and less than or equal to 20 nm in a surface portion,wherein the source electrode layer or the drain electrode layer is in contact with a side surface of the oxide semiconductor layer,wherein the source electrode layer and the drain electrode layer overlap with the gate electrode layer, andwherein the crystal region has c-axis alignment.

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