Methods, complexes, and systems for forming metal-containing films on semiconductor structures

• US 20010055877A1
• Filed: 05/25/2001
• Published: 12/27/2001
• Est. Priority Date: 09/02/1998
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Granted Patent: US 6,786,936 B2
• Time in Patent Office: Days
• US Class Current: 438/681
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A method of manufacturing a semiconductor structure, the method comprising:

providing a semiconductor substrate or substrate assembly;

providing a precursor composition comprising one or more complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³, and R⁴ group is independently H or an organic group;

L is selected from the group of CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group;

x=1 to 4; and

y=1 to 4; and

forming a metal-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.

2. The method of

claim 1

wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.

3. The method of

claim 2

wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.

4. The method of

claim 2

wherein the precursor composition is vaporized in the presence of a carrier gas.

5. The method of

claim 2

wherein the precursor composition is vaporized in the presence of a reaction gas.

6. The method of

claim 5

wherein the reaction gas is selected from the group of H₂, SiH₄, Si₂H₆, NH₃, N₂H₄, PH₃, AsH₃, GeH₄, t-BuSbMe₂, H₂S, H₂Se, Te(allyl)₂, and combinations thereof.

7. The method of

claim 1

wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₃₀)organic group.

8. The method of

claim 1

wherein the complex is a monomer.

9. The method of

claim 1

wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

10. The method of

claim 1

wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

11. The method of

claim 1

wherein the precursor composition is a liquid.

12. The method of

claim 1

wherein the metal is a Group VB metal.

13. The method of

claim 12

wherein the metal is vanadium.

14. The method of

claim 1

wherein the metal-containing film is a Group IVB, VB, or VIB metal alloy film.

17. The method of

claim 14

wherein the precursor composition is liquid.

15. A method of forming a film on a substrate, the method comprising:

providing a substrate;

providing a precursor composition comprising one or more complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³, and R⁴ is independently H or an organic group;

L is selected from the group of CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group

x=1 to 4; and

y=1 to 4; and

forming a metal-containing film from the precursor composition on a surface of the substrate.

16. The method of

claim 15

wherein the step of forming a metal-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.

18. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor comprising one or more complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³, and R⁴ is independently H or an organic group;

L is selected from the group of CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group;

x=1 to 4; and

y=1 to 4; and

a source of an inert carrier gas for transferring the precursor to the chemical vapor deposition chamber.

19. A chemical vapor deposition system comprising:

a deposition chamber having a substrate positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³, and R⁴ is independently H or an organic group;

each L is independently CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group;

x=1 to 4; and

y=1 to 4.

20. The system of

claim 19

wherein the deposition chamber is adapted for forming a metal-containing film comprising vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor depositional technique.

21. The system of

claim 20

wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.

22. The system of

claim 20

wherein the precursor composition is vaporized in the presence of a carrier gas.

23. The system of

claim 20

wherein the precursor composition is vaporized in the presence of a reaction gas.

24. The system of

claim 23

wherein the reaction gas is selected from the group of H₂, SiH₄, Si₂H₆, NH₃, N₂H₄, PH₃, AsH₃, GeH₄, t-BuSbMe₂, H₂S, H₂Se, Te(allyl)₂, and combinations thereof.

25. The system of

claim 19

wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₃₀)organic group.

26. The system of

claim 19

wherein the complex is a monomer.

27. The system of

claim 19

wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

28. The system of

claim 19

wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

29. The system of

claim 19

wherein the precursor composition is a liquid.

30. The system of

claim 19

wherein the metal is a Group VB metal.

31. The system of

claim 30

wherein the metal is vanadium.

32. The system of

claim 19

wherein the metal-containing film is a Group IVB, VB, or VIB metal alloy film.

33. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;

a vessel containing a precursor composition comprising one or more complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³,and R⁴ is independently H or an organic group;

each L is independently CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group;

x=1 to 4; and

y=1 to 4.

34. The system of

claim 33

wherein each R¹, R², R³, and R⁴ is independently H or a (C₁-C₃₀)organic group.

35. The system of

claim 33

wherein the complex is a monomer.

36. The system of

claim 33

wherein each R¹, R², R³, and R⁴ group is independently H or a (C₁-C₄)alkyl moiety.

37. The system of

claim 33

wherein R⁷ is cyclopentadienyl or a substituted cyclopentadienyl.

38. A chemical vapor deposition system comprising:

a deposition chamber having a semiconductor substrate or substrate assembly positional therein;

a vessel containing a precursor composition comprising one or more liquid complexes of the formula;

[(R¹)NC(R²)C(R³)N(R⁴)]_xML_y

wherein;

M is a Group IVB, VB, or VIB metal;

each R¹, R², R³, and R⁴ independently H or a (C₁-C₃₀)organic group;

each L is independently CO, NO, CN, CS, CNR⁵, R⁶CN, or R⁷, wherein each R⁵, R⁶, and R⁷ group is independently an organic group;

x=1 to 4; and

y=1 to 4.