Methods, complexes, and systems for forming metal-containing films on semiconductor structures
First Claim
Patent Images
1. A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
a vessel containing a precursor comprising one or more complexes of the formula;
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Abstract
A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
39 Citations
21 Claims
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1. A chemical vapor deposition system comprising:
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a deposition chamber having a substrate positioned therein;
a vessel containing a precursor comprising one or more complexes of the formula;
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2. A chemical vapor deposition system comprising:
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a deposition chamber having a substrate positioned therein;
a vessel containing a precursor composition comprising one or more complexes of the formula;
- View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A chemical vapor deposition system comprising:
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a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
a vessel containing a precursor composition comprising one or more complexes of the formula;
- View Dependent Claims (11, 12, 13, 14)
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15. A chemical vapor deposition system comprising:
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a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
a vessel containing a precursor composition comprising one or more liquid complexes of the formula;
- View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification