Mosfet with strained channel layer

  • US 20020008289A1
  • Filed: 07/20/2001
  • Published: 01/24/2002
  • Est. Priority Date: 07/24/2000
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    an insulating layer formed over the substrate;

    a stacked Si/SiGe/Si region in which a first layer of Si, a layer of SiGe and a second layer of Si are sequentially formed on the insulating layer, the topmost second layer of Si and the layer of SiGe being strained based on the difference in lattice constant between each layer in the stacked Si/SiGe/Si region; and

    an n-MOSFET and a p-MOSFET formed in the stacked Si/SiGe/Si region, the n-MOSFET having a surface channel consisting of the second strained layer of Si, and the p-MOSFET having a double channel of a buried channel consisting of the strained layer of SiGe and a surface channel consisting of the second strained layer of Si.

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