Semiconductor device and method of manufacturing the same

  • US 20020130355A1
  • Filed: 03/15/2002
  • Published: 09/19/2002
  • Est. Priority Date: 03/16/2001
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising;

  • a semiconductor substrate;

    a first gate electrode formed on said semiconductor substrate;

    a first diffusion layer formed in said semiconductor substrate, said first diffusion layer being provided under one of opposite side portions of said first gate electrode;

    a second diffusion layer formed in said semiconductor substrate, said second diffusion layer being under another one of said opposite side portions of said first gate electrode;

    a second gate electrode formed on said semiconductor substrate, a side portion of the second gate electrode being provided on said second diffusion layer;

    a first insulating film formed on said semiconductor substrate, said first insulating film covering said first gate electrode, said second gate electrode, said first diffusion layer and said second diffusion layer, a portion of said first insulating film being embedded between said first gate electrode and said second gate electrode, a thickness of a portion of said first insulating film, which is provided on said first diffusion layer, being thinner than a thickness of said portion of said first insulating film, which is embedded between said first gate electrode and said second gate electrode, said first insulating film not containing nitrogen as a major component;

    a second insulating film formed on said first insulating film;

    an interlayer insulating film formed on said second insulating film, a major component of said interlayer insulating film being different from a major component of said second insulating film; and

    a contact electrode connected to said first diffusion layer, said contact electrode being formed in said first insulating film, said second insulating film and said interlayer insulating film.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×