Semiconductor device

  • US 20030001658A1
  • Filed: 07/24/2002
  • Published: 01/02/2003
  • Est. Priority Date: 11/28/2000
  • Status: Abandoned Application
  • ×
    • Pin Icon | RPX Insight
    • Pin
First Claim
Patent Images

1. A semiconductor apparatus which is a MOS-type semiconductor apparatus formed using an SOI substrate formed with a support substrate, an insulation layer, and a semiconductor layer sequentially layered, comprising:

  • a conductor beneath said insulation layer; and

    a threshold-value control circuit which compares signals generated by an oscillator in said semiconductor apparatus to a reference signal inputted from outside, and applies a bias voltage to said conductor based on the difference between both signals.

View all claims
  • 1 Assignment

    Thank you for your feedback