Method for fabricating metal interconnects

  • US 20030092257A1
  • Filed: 11/27/2001
  • Published: 05/15/2003
  • Est. Priority Date: 11/09/2001
  • Status: Abandoned Application
First Claim
Patent Images

1. A method for fabricating metal interconnects, comprising the steps of:

  • providing a substrate on which a dielectric layer is formed;

    forming an opening in the dielectric layer;

    forming a metal layer on the substrate to fill the opening;

    forming a protective layer on the metal layer; and

    removing the protective layer and the metal layer outside the opening.

View all claims

    Thank you for your feedback