Method for fabricating metal interconnects
First Claim
1. A method for fabricating metal interconnects, comprising the steps of:
- providing a substrate on which a dielectric layer is formed;
forming an opening in the dielectric layer;
forming a metal layer on the substrate to fill the opening;
forming a protective layer on the metal layer; and
removing the protective layer and the metal layer outside the opening.
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Accused Products
Abstract
A method for fabricating metal interconnects, in which a dielectric layer is formed over a substrate and then an opening is formed in the dielectric layer, is described. A metal layer is formed to fill the opening and then a protective layer is form on the surface of the metal layer by an electrochemical method. Thereafter, the protective layer and the metal layer outside the opening are removed to complete the metal interconnect process. Since the protective layer is more stable than the metal layer so that oxidation of the metal layer can be prevented, the queue time (Q-time) between the metal deposition process and the chemical mechanical polishing (CMP) process can be increased with more flexibility.
6 Citations
20 Claims
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1. A method for fabricating metal interconnects, comprising the steps of:
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providing a substrate on which a dielectric layer is formed;
forming an opening in the dielectric layer;
forming a metal layer on the substrate to fill the opening;
forming a protective layer on the metal layer; and
removing the protective layer and the metal layer outside the opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating metal interconnects, comprising the steps of:
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providing a substrate with a dielectric layer formed thereon;
forming an opening in the dielectric layer;
forming a copper layer on the substrate to fill the opening;
forming a cuprous oxide protective layer on a surface of the copper layer; and
removing the cuprous oxide protective layer and the copper layer outside the opening. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification