Electric power semiconductor device
First Claim
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1. An electric power semiconductor device comprising:
- a circuit pattern formed on a main surface of an insulating substrate;
a semiconductor chip mounted on the circuit pattern;
an electrode plate assembly formed near the circuit pattern, having a first electrode terminal provided at a predetermined position thereof and a second electrode terminal disposed below the first electrode terminal;
a first connecting conductor made by wire bonding for connecting the semiconductor chip to the first electrode terminal; and
a second connecting conductor having an extending portion extended from a part of the second electrode terminal to be connected to the circuit pattern, wherein the second connecting conductor is provided below the first connecting conductor with a space therefrom, and the connection between the extending portion of the second electrode terminal and the circuit pattern is implemented by a solder.
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Accused Products
Abstract
Semiconductor chips are connected to electrode terminals (6a, 6b) by wire bonding, and connecting conductors connect extending portions (60b, 60c) extending from a part of the electrode terminals (6b, 6c) to the circuit patterns (3a, 3b) by soldering, and thus the wire bonding points of the electrode terminals are reduced to thereby reduce an electric resistance and suppress heat generation and voltage drop.
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Citations
13 Claims
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1. An electric power semiconductor device comprising:
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a circuit pattern formed on a main surface of an insulating substrate;
a semiconductor chip mounted on the circuit pattern;
an electrode plate assembly formed near the circuit pattern, having a first electrode terminal provided at a predetermined position thereof and a second electrode terminal disposed below the first electrode terminal;
a first connecting conductor made by wire bonding for connecting the semiconductor chip to the first electrode terminal; and
a second connecting conductor having an extending portion extended from a part of the second electrode terminal to be connected to the circuit pattern, wherein the second connecting conductor is provided below the first connecting conductor with a space therefrom, and the connection between the extending portion of the second electrode terminal and the circuit pattern is implemented by a solder. - View Dependent Claims (2, 3)
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4. An electric power semiconductor device comprising:
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first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively;
first and second semiconductor chips mounted on the first and second circuit patterns, respectively;
a multilayer electrode plate assembly disposed between the first and second insulating substrates, having first, second and third electrode terminals provided with a distance from each other;
a first connecting conductor made by wire bonding for connecting the first and second semiconductor chips to the first and second electrode terminals; and
a second connecting conductor having an extending portion extended from a part of the third electrode terminal to be connected to the second circuit pattern, wherein the connection between the extending portion of the third electrode terminal and the second circuit pattern is implemented by a solder. - View Dependent Claims (5, 6, 7)
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8. An electric power semiconductor device comprising:
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first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively;
first and second semiconductor chips mounted on the first and second circuit patterns, respectively;
an electrode terminal disposed between the first and second insulating substrates;
a connecting conductor for connecting between the electrode terminal and the first circuit pattern; and
a bonding wire for connecting between the electrode terminal and the second semiconductor chip, wherein the connecting conductor is formed of an extending portion extended from a part of the electrode terminal, and one end portion of the extending portion is connected to the first circuit pattern by a solder. - View Dependent Claims (9, 10)
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11. An electric power semiconductor device comprising:
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first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively;
first and second semiconductor chips mounted on the first and second circuit patterns, respectively;
first, second and third electrode terminals which are laminated from an upper position to a lower position in this order, and disposed between the first and second insulating substrates;
a first bonding wire for connecting between the first semiconductor chip and the first electrode terminal;
a second bonding wire for connecting between the second semiconductor chip and the second electrode terminal;
a first connecting conductor for connecting between the second electrode terminal and the first circuit pattern; and
a second connecting conductor for connecting between the third electrode terminal and the second circuit pattern, wherein the first connecting conductor is formed of a first extending portion extended from a part of the second electrode terminal, and the second connecting conductor is formed of a second extending portion extended from a part of the third electrode terminal, and wherein one end portion of the first extending portion is connected to the first circuit pattern by a solder, and one end portion of the second extending portion is connected to the second circuit pattern by a solder. - View Dependent Claims (12, 13)
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Specification