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Electric power semiconductor device

  • US 7,291,928 B2
  • Filed: 08/27/2003
  • Issued: 11/06/2007
  • Est. Priority Date: 08/30/2002
  • Status: Active Grant
First Claim
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1. An electric power semiconductor device comprising:

  • a circuit pattern formed on a main surface of an insulating substrate;

    a semiconductor chip mounted on the circuit pattern;

    an electrode plate assembly formed near the circuit pattern, having a first electrode terminal provided at a predetermined position thereof and a second electrode terminal disposed below the first electrode terminal;

    a first connecting conductor made by wire bonding for connecting the semiconductor chip to the first electrode terminal; and

    a second connecting conductor having an extending portion extended from a part of the second electrode terminal to be connected to the circuit pattern,wherein the second connecting conductor is provided below the first connecting conductor with a space therefrom, and the connection between the extending portion of the second electrode terminal and the circuit pattern is implemented by a solder.

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