Low voltage multi-junction vertical cavity surface emitting laser
First Claim
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1. A method of fabricating an optical device with a wavelength of operation, the method comprising the steps of:
- providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes an active region and a contact region of a first conductivity type and a second conductivity type such that the light emitting region is sandwiched between contact regions of opposite conductivity types;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the light emitting region; and
epitaxially growing a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror.
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Abstract
An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.
45 Citations
72 Claims
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1. A method of fabricating an optical device with a wavelength of operation, the method comprising the steps of:
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providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes an active region and a contact region of a first conductivity type and a second conductivity type such that the light emitting region is sandwiched between contact regions of opposite conductivity types;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the light emitting region; and
epitaxially growing a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of fabricating a multijunction laser with a wavelength of operation, the method comprising the steps of:
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providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes a plurality of active regions with a plurality of quantum structure layers each sandwiched between cladding regions and wherein each of the plurality of active regions is separated by alternate contact regions of a first conductivity type and a second conductivity type wherein the first conductivity type is opposite in conductivity to the second conductivity type;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the at least one light emitting region; and
epitaxially growing a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. An optical device with a wavelength of operation, the device comprising:
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a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror; and
a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. An optical device with a wavelength of operation, the device comprising:
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a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region with a plurality of quantum structure layers and a contact region of a first conductivity type and a second conductivity type such that the light emitting region is sandwiched between contact regions of opposite conductivity types;
a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction, the first stack of alternate layers being positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
a substrate solder bonded to the first stack of alternate layers; and
a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror. - View Dependent Claims (45, 46, 47, 48, 49, 50)
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51. A multifunction laser with a wavelength of operation, the laser comprising:
a light emitting region which substantially emits light at the wavelength of operation, the light emitting region being positioned within an optical gain cavity which includes a mirror and an opposed mirror wherein the light emitting region includes at least two active regions wherein each active region is separated by alternate contact regions of a first conductivity type and a second conductivity type such that each active region has a separate direct current path. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 68)
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67. A multijunction laser with a wavelength of operation, the laser comprising:
a light emitting region which substantially emits light at the wavelength of operation positioned within an optical gain cavity wherein the light emitting region includes a plurality of active regions and wherein each active region is separated by alternate contact regions of a first conductivity type and a second conductivity type.
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69. A method of modulating a multifunction laser with a wavelength of operation, the method comprising the steps of:
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epitaxially growing a light emitting region positioned within an optical gain cavity which includes a mirror and an opposed mirror, wherein the light emitting region emits light at the wavelength of operation and includes a plurality of active regions wherein each of the plurality of active regions is separated by alternate contact regions of a first conductivity type and a second conductivity type;
forming a suitable electrical contact to each alternate contact region of the first and second conductivity types;
electrically connecting a direct current power source and one of an alternating current power source and an alternating current power return to each contact region of the first conductivity type; and
electrically connecting a direct current power return to each contact region of the second conductivity type. - View Dependent Claims (70, 71, 72)
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Specification