Mask manufacturing method

• US 20050064301A1
• Filed: 09/02/2004
• Published: 03/24/2005
• Est. Priority Date: 09/08/2003
• Status: Abandoned Application

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Yamaguchi, Takako, Inao, Yasuhisa
• Application Number:
  US10/931,985
• Publication Number:
  US 20050064301A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 7/7035 Proximity or contact printers

Abstract

A mask manufacturing method includes a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening; and a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in the first step.

Claims

1. A mask manufacturing method, comprising:

a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening, and

a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in said first step.

2. A method according to claim 1, wherein the first mask comprises a light blocking film provided with a plurality of fine openings each having an opening width and an opening spacing with an adjacent fine opening, and the second mask formed in said second step is provided with fine openings each having an opening width smaller than the opening spacing of the first mask.

3. A method according to claim 1, wherein said first step comprises a step of transferring a pattern of the first mask to an image forming layer of a positive resist formed on a mask base material, by near-field exposure, and said second step comprises a step of forming a light blocking film having the fine opening on the mask base material on the basis of the pattern transferred to the light blocking film.

4. A method according to claim 3, wherein in said second step, a buffer layer is formed between the light blocking film and the mask base material, the pattern transferred to the light blocking film is transferred to the buffer layer, and the light blocking film having the fine opening is formed on the basis of the pattern transferred to the buffer layer.

5. A method according to claim 1, wherein said first step comprises a step of transferring a pattern of the first mask to an image forming layer of a negative resist formed on a light blocking film disposed on a mask base material, by near-field exposure, and said second step comprises a step of forming the fine opening in the light blocking film disposed on the mask base material on the basis of the pattern transferred to the light blocking film.

6. A method according to claim 5, wherein in said second step, a buffer layer is formed between the light blocking film and the light blocking film disposed on the mask base material, the pattern transferred to the light blocking film is transferred to the buffer layer, and the fine opening is formed in the light blocking film disposed on the basis of the pattern transferred to the buffer layer.

7. A method according to claim 1, wherein said first step comprises a process of bending the first mask or a process of bending the workpiece substrate.