Seed layers for metallic interconnects

  • US 20050148172A1
  • Filed: 02/14/2005
  • Published: 07/07/2005
  • Est. Priority Date: 10/02/1999
  • Status: Active Grant
First Claim
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1. A method for making copper or a copper alloy interconnects, said method comprising:

  • forming a patterned insulating layer over a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening;

    depositing a barrier layer over the patterned insulating layer including over the field and inside surfaces of the at least one opening, the barrier layer comprising a refractory metal or an alloy comprising a refractory metal;

    physical vapor depositing a substantially non-conformal seed layer comprising copper or a copper alloy over the barrier layer, wherein said substantially non-conformal seed layer is thicker than about 500 Å

    over the field;

    chemical vapor depositing a substantially conformal seed layer comprising copper or a copper alloy over the substantially non-conformal seed layer; and

    filling the at least one opening by electroplating a metallic layer comprising copper or a copper alloy over the substantially conformal seed layer.

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