Semiconductor chip and manufacturing method for the same, and semiconductor device
First Claim
1. A semiconductor chip manufacturing method comprising the steps of:
- forming a concave portion extending in the thickness direction of a semiconductor substrate that has a front surface and a rear surface and has a function device formed on the front surface, from the front surface;
forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion;
supplying a second metal material containing a metal that is oxidized more easily than the first metal material into the concave portion after the step of forming the oxidation preventive film;
electrically connecting the second metal material supplied into the concave portion and the function device; and
thinning the semiconductor substrate, so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film, the concave portion is formed into a through hole penetrating the semiconductor substrate in the thickness direction, and the second metal material disposed inside the concave portion is formed into a penetrating electrode that electrically connects the front surface side and the rear surface side of the semiconductor substrate and a rear side protruding electrode protruding from the rear surface side of the semiconductor substrate.
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Accused Products
Abstract
The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.
232 Citations
22 Claims
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1. A semiconductor chip manufacturing method comprising the steps of:
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forming a concave portion extending in the thickness direction of a semiconductor substrate that has a front surface and a rear surface and has a function device formed on the front surface, from the front surface;
forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion;
supplying a second metal material containing a metal that is oxidized more easily than the first metal material into the concave portion after the step of forming the oxidation preventive film;
electrically connecting the second metal material supplied into the concave portion and the function device; and
thinning the semiconductor substrate, so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film, the concave portion is formed into a through hole penetrating the semiconductor substrate in the thickness direction, and the second metal material disposed inside the concave portion is formed into a penetrating electrode that electrically connects the front surface side and the rear surface side of the semiconductor substrate and a rear side protruding electrode protruding from the rear surface side of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor chip manufacturing method comprising the steps of:
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forming hole opened to one surface of a semiconductor substrate on which a function device is formed;
embedding a polymer inside the hole;
forming an interconnection layer electrically connected to the function device on an exposed surface of the polymer embedded inside the hole; and
forming a protruding electrode on the interconnection layer on the polymer. - View Dependent Claims (9, 10)
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11. A semiconductor chip, comprising:
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a semiconductor substrate having a front surface and a rear surface;
a function device formed on the front surface of the semiconductor substrate;
a penetrating electrode which is electrically connected to the function device, disposed inside a through hole penetrating the semiconductor substrate in the thickness direction by the side of the function device, and electrically connect the front surface side and the rear surface side of the semiconductor substrate;
a rear side protruding electrode which protrudes from the rear surface of the semiconductor substrate and has aside surface continued to the side surface of the penetrating electrode; and
an oxidation preventive film which covers the rear side protruding electrode, and is disposed between the semiconductor substrate and the penetrating electrode inside the through hole, and is made of an inert metal material. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor chip comprising:
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a semiconductor substrate with a function device formed thereon;
a polymer disposed so as to fill the inside of a hole opened to one surface of the semiconductor substrate;
an interconnection layer which is formed on the polymer embedded inside the hole and electrically connected to the function device; and
a protruding electrode provided on a portion positioned above the polymer of the interconnection layer. - View Dependent Claims (18)
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19. A semiconductor chip comprising:
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a semiconductor substrate with a function device formed thereon;
a polymer disposed inside a through hole penetrating the semiconductor substrate in the thickness direction;
an interconnection layer which is formed on the polymer disposed inside the through hole and electrically connected to the function device;
a protruding electrode provided on a portion positioned above the polymer of the interconnection layer; and
a conductive film which is disposed across one surface and the other surface of the semiconductor substrate inside the through hole and electrically connected to the function device.
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20. A semiconductor device including a plurality of semiconductor chips stacked in the thickness direction, wherein
each semiconductor chip comprises: -
a semiconductor substrate having a front surface and a rear surface;
a function device formed on the front surface of the semiconductor substrate;
a penetrating electrode which is electrically connected to the function device, disposed inside a through hole penetrating the semiconductor substrate in the thickness direction by the side of the function device, the penetrating electrode electrically connecting the front surface side and the rear surface side of the semiconductor substrate;
a rear side protruding electrode which protrudes from the rear surface of the semiconductor substrate and has a side surface continued to the side surface of the penetrating electrode; and
an oxidation preventive film which covers the rear side protruding electrode, and is disposed between the semiconductor substrate and the penetrating electrode inside the through hole and made of an inert metal material.
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21. A semiconductor device including a plurality of semiconductor chips stacked in the thickness direction, wherein
each semiconductor chip comprises: -
a semiconductor substrate with a function device formed thereon;
a polymer disposed so as to fill the inside of a hole opened to one surface of the semiconductor substrate;
an interconnection layer which is formed on the polymer embedded inside the hole and electrically connected to the function device; and
a protruding electrode provided on a portion positioned above the polymer of the interconnection layer.
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22. A semiconductor device including a plurality of semiconductor chips stacked in the thickness direction, wherein
each semiconductor chip comprises: -
a semiconductor substrate with a function device formed thereon;
a polymer disposed inside a through hole penetrating the semiconductor substrate in the thickness direction;
an interconnection layer which is formed on the polymer disposed inside the through hole and electrically connected to the function device;
a protruding electrode provided on a portion positioned above the polymer of the interconnection layer; and
a conductive film which is disposed across one surface and the other surface of the semiconductor substrate inside the through hole and is electrically connected to the function device.
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Specification