Method of manufacturing a semiconductor device
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Abstract
A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
184 Citations
77 Claims
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1-56. -56. (canceled)
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57. A liquid crystal display device comprising:
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a pair of light transmitting substrates comprising a resin, each of the light transmitting substrate having a curved surface; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, a pixel electrode electrically connected to the drain region wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1020 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (67, 74)
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58. A liquid crystal display device comprising:
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a pair of light transmitting substrates comprising a resin, each of the light transmitting substrate having a flexibility; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, a pixel electrode electrically connected to the drain region wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1020 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (68, 75)
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59. A liquid crystal display device comprising:
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a pair of light transmitting substrates comprising a resin, each of the light transmitting substrate having a curved surface; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, a pixel electrode comprising ITO electrically connected to the drain region wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1020 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (69)
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60. A liquid crystal display device comprising:
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a pair of light transmitting substrates comprising a resin, each of the light transmitting substrate having a flexibility; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1024 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (70)
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61. An object comprising:
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a front glass;
a pair of light transmitting substrates comprising a resin over the front glass, each of the light transmitting substrate having a curved surface; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1020 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (71, 76)
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62. An object comprising:
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a front glass;
a pair of light transmitting substrates comprising a resin over the front glass, each of the light transmitting substrate having a flexibility; and
a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween, wherein at least the channel formation region contains hydrogen atoms at a density of 1×
1020 atoms cm−
3 or less, and contains carbon and nitrogen atoms at a density of 5×
1018 atoms cm−
3 or less, and contains oxygen atoms at a density of 5×
1019 atoms cm−
3 or less. - View Dependent Claims (72, 77)
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63. An object comprising:
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a substrate having a curved surface;
a first light transmitting substrate comprising resin having a flexibility attached on the substrate having a curved surface;
a thin film integrated circuit comprising a thin film transistor provided over the first light transmitting substrate; and
a second light transmitting substrate comprising resin having a flexibility provided over the thin film integrated circuit. - View Dependent Claims (64, 65, 66, 73)
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Specification
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Current AssigneeSatoshi Teramoto, Shunpei Yamazaki, Yasuyuki Arai
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Original AssigneeSatoshi Teramoto, Shunpei Yamazaki, Yasuyuki Arai
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InventorsTeramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current349/42
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CPC Class CodesH01L 21/02422 Non-crystalline insulating ...H01L 21/02532 Silicon, silicon germanium,...H01L 21/02672 using crystallisation enhan...H01L 21/02675 using laser beamsH01L 2221/68318 Auxiliary support including...H01L 2221/68359 used as a support during ma...H01L 2221/68363 used in a transfer process ...H01L 27/1266 the substrate on which the ...H01L 27/1277 using a crystallisation pro...H01L 29/66757 Lateral single gate single ...Y10S 438/928 Front and rear surface proc...Y10S 438/977 Thinning or removal of subs...
